SI3585CDV-T1-GE3

Mfr. #:: SI3585CDV-T1-GE3
制造商:: Vishay
描述:: Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
生命周期:: 制造商新产品。
数据表:: SI3585CDV-T1-GE3 数据表
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更多信息:: SI3585CDV-T1-GE3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI3585CDV-GE3

单位重量: 0.000705 oz

安装方式: 贴片/贴片

包装盒: SOT-23-6 Thin, TSOT-23-6

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-TSOP

配置: 1 N-Channel 1 P-Channel

FET型: N 和 P 沟道

最大功率: 1.4W, 1.3W

晶体管型: 1 N-Channel 1 P-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 150pF @ 10V

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 3.9A, 2.1A

Rds-On-Max-Id-Vgs: 58 mOhm @ 2.5A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

栅极电荷-Qg-Vgs: 4.8nC @ 10V

钯功耗: 1.4 W 1.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8 ns 7 ns

上升时间: 20 ns 10 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 3.9 A - 2.1 A

Vds-漏-源-击穿电压: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 1.5 V - 1.5 V

Rds-On-Drain-Source-Resistance: 58 mOhms 195 mOhms

晶体管极性: N 沟道 P 沟道

典型关断延迟时间: 11 ns 13 ns

典型开启延迟时间: 5 ns 3 ns

Qg-门电荷: 3.2 nC 6 nC

正向跨导最小值: 12 S 1 S

Tags: SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3585CDV-T1-GE3 更多信息

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Market price

型号	制造商	描述	库存	价格
SI3585CDV-T1-GE3 DISTI # V72:2272_09216703	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.1576 1000:$0.1751 500:$0.2161 250:$0.2476 100:$0.2503 25:$0.3124 10:$0.3163 1:$0.3860
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12000In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12000In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2046
SI3585CDV-T1-GE3 DISTI # 31154779	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.1576 1000:$0.1751 500:$0.2161 250:$0.2476 100:$0.2503 48:$0.3124
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3089 6000:€0.2109 12000:€0.1809 18000:€0.1669 30000:€0.1559
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1609 6000:$0.1559 12000:$0.1499 18000:$0.1459 30000:$0.1419
SI3585CDV-T1-GE3 DISTI # 70AC6501	Vishay Intertechnologies		0	1:$0.6500 25:$0.5440 50:$0.4760 100:$0.4070 250:$0.3530 500:$0.2990 1000:$0.2310
SI3585CDV-T1-GE3 DISTI # 99W9612	Vishay Intertechnologies	Dual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V	0	1:$0.1760 3000:$0.1740 6000:$0.1660
SI3585CDV-T1-GE3 DISTI # 78-SI3585CDV-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	378	1:$0.5700 10:$0.4340 100:$0.3220 500:$0.2650 1000:$0.2050 3000:$0.2000
SI3585CDV-T1-GE3 DISTI # 2454805RL	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	1:$0.9020 10:$0.6870 100:$0.5100 500:$0.4190 1000:$0.3250 3000:$0.2940 6000:$0.2810
SI3585CDV-T1-GE3 DISTI # 2454805	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	1:$0.9020 10:$0.6870 100:$0.5100 500:$0.4190 1000:$0.3250 3000:$0.2940 6000:$0.2810
SI3585CDV-T1-GE3 DISTI # 2454805	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	5:£0.4650 25:£0.4380 100:£0.3050
SI3585CDV-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	Americas -	3000:$0.1570 6000:$0.1480 12000:$0.1440 24000:$0.1420

图片	型号	描述
	Mfr.#: SI3585CDV-T1-GE3 OMO.#: OMO-SI3585CDV-T1-GE3	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
	Mfr.#: SI3585CDV OMO.#: OMO-SI3585CDV-1190	全新原装
	Mfr.#: SI3585CDV-T1-E3 OMO.#: OMO-SI3585CDV-T1-E3-1190	全新原装
	Mfr.#: SI3585CDV-T1-GE3-CUT TAPE OMO.#: OMO-SI3585CDV-T1-GE3-CUT-TAPE-1190	全新原装
	Mfr.#: SI3585CDV-T1-GE3 OMO.#: OMO-SI3585CDV-T1-GE3-VISHAY	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R

SI3585CDV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes