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IPB019N06L3 G

IPB019N06L3 G
Mfr. #:
IPB019N06L3 G
制造商:
Infineon Technologies
描述:
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
生命周期:
制造商新产品。
数据表:
IPB019N06L3 G 数据表
交货:
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更多信息:
IPB019N06L3 G 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
OptiMOS 3
打包
卷轴
部分别名
IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020
单位重量
0.068654 oz
商品名
优化MOS
包装盒
TO-263-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
250 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
38 ns
上升时间
79 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
120 A
Vds-漏-源-击穿电压
60 V
Rds-On-Drain-Source-Resistance
1.9 mOhms
晶体管极性
N通道
典型关断延迟时间
131 ns
典型开启延迟时间
35 ns
通道模式
增强
Tags
IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB019N06L3GATMA1
DISTI # V72:2272_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 500:$2.5240
  • 250:$2.8110
  • 100:$2.9590
  • 25:$3.0720
  • 10:$3.4130
  • 1:$4.4143
IPB019N06L3GATMA1
DISTI # V36:1790_06377428		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$1.8500
  • 500000:$1.8520
  • 100000:$1.9880
  • 10000:$2.2080
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1792In Stock
  • 500:$2.7405
  • 100:$3.2193
  • 10:$3.9290
  • 1:$4.3700
IPB019N06L3GATMA1
DISTI # IPB019N06L3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.1318
  • 1000:$2.2440
IPB019N06L3GATMA1
DISTI # 33709822		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		977
  • 3:$4.4143
IPB019N06L3 G
DISTI # 31073238		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
RoHS: Compliant		78
  • 5:$5.2375
IPB019N06L3GXT
DISTI # IPB019N06L3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.8900
  • 10000:$1.8900
  • 4000:$1.9900
  • 1000:$2.0900
  • 2000:$2.0900
IPB019N06L3GATMA1
DISTI # SP000453020		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.5900
  • 6000:€1.6900
  • 2000:€1.8900
  • 4000:€1.8900
  • 1000:€1.9900
IPB019N06L3GATMA1
DISTI # 47Y8046		Infineon Technologies AGMOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes0
    IPB019N06L3 G
    DISTI # 726-IPB019N06L3G    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1050
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 726-IPB019N06L3GATMA    		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
    RoHS: Compliant    		1639
    • 1:$4.0400
    • 10:$3.4300
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 2000:$2.0300
    IPB019N06L3GATMA1
    DISTI # 8275293P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL1440
    • 100:£2.0380
    • 50:£2.3480
    IPB019N06L3GATMA1
    DISTI # IPB019N06L3GATMA1    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3683
    • 100:$2.4550
    • 10:$2.8267
    • 3:$3.1983
    • 1:$3.5474
    IPB019N06L3GATMA1
    DISTI # 2443430    		Infineon Technologies AGMOSFET, N CH, 60V, 120A, TO-263-3
    RoHS: Compliant    		0
    • 1000:$3.2100
    • 500:$3.8100
    • 250:$4.2500
    • 100:$4.4800
    • 10:$5.1700
    • 1:$6.0900
    图片 型号 描述
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N5ATMA1

    Mfr.#: IPB019N08N5ATMA1

    OMO.#: OMO-IPB019N08N5ATMA1-1190

    		 DIFFERENTIATED MOSFETS
    IPB019N06

    Mfr.#: IPB019N06

    OMO.#: OMO-IPB019N06-1190

    		 全新原装
    IPB019N06L3

    Mfr.#: IPB019N06L3

    OMO.#: OMO-IPB019N06L3-1190

    		 全新原装
    IPB019N06L3G

    Mfr.#: IPB019N06L3G

    OMO.#: OMO-IPB019N06L3G-1190

    		 全新原装
    IPB019N06L3GATMA1

    Mfr.#: IPB019N06L3GATMA1

    OMO.#: OMO-IPB019N06L3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    IPB019N08N

    Mfr.#: IPB019N08N

    OMO.#: OMO-IPB019N08N-1190

    		 全新原装
    IPB019N08N3 G

    Mfr.#: IPB019N08N3 G

    OMO.#: OMO-IPB019N08N3-G-1190

    		 MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
    IPB019N08N3GATMA1

    Mfr.#: IPB019N08N3GATMA1

    OMO.#: OMO-IPB019N08N3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 80V 180A TO263-7
    IPB019N08N3GS

    Mfr.#: IPB019N08N3GS

    OMO.#: OMO-IPB019N08N3GS-1190

    		 全新原装
    可用性
    库存:
    Available
    订购:
    2500
    输入数量:
    IPB019N06L3 G的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$3.04
    US$3.04
    10
    US$2.89
    US$28.93
    100
    US$2.74
    US$274.05
    500
    US$2.59
    US$1 294.15
    1000
    US$2.44
    US$2 436.00
    从...开始
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