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IPW60R040CFD7XKSA1

IPW60R040CFD7XKSA1
Mfr. #:
IPW60R040CFD7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPW60R040CFD7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPW60R040CFD7XKSA1 Datasheet
ECAD Model:
更多信息:
IPW60R040CFD7XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
600 V
Id - 连续漏极电流：
50 A
Rds On - 漏源电阻：
40 mOhms
Vgs th - 栅源阈值电压：
3.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
109 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
227 W
配置：
单身的
频道模式：
增强
打包：
管子
系列：
CoolMOS CFD7
品牌：
英飞凌科技
秋季时间：
6 ns
产品类别：
MOSFET
上升时间：
19 ns
出厂包装数量：
240
子类别：
MOSFET
典型关断延迟时间：
112 ns
典型的开启延迟时间：
36 ns
第 # 部分别名：
IPW60R040CFD7 SP001686068
Tags
IPW60R040, IPW60R04, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 SJ High Voltage MOSFET 600V 40mOhm TO-247
***ronik
N-CH 600V 50A 40mOhm TO-247-3
***i-Key
HIGH POWER_NEW
***ark
Mosfet, 600V, 50A, 150Deg C, 227W; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, 600V, 50A, 150DEG C, 227W; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:227W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD7 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, 600V, 50A, 150° C, 227W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:50A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.031ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. | Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CFD7 CoolMOS™ MOSFETs
Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power SMPS applications include server, telecom and EV charging stations.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
型号 制造商 描述 库存 价格
IPW60R040CFD7XKSA1
DISTI # IPW60R040CFD7XKSA1-ND		Infineon Technologies AGHIGH POWER_NEW
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 720:$7.8182
  • 240:$8.9783
  • 25:$10.3400
  • 10:$10.8450
  • 1:$12.0000
IPW60R040CFD7XKSA1
DISTI # IPW60R040CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 SJ High Voltage MOSFET 600V 40mOhm TO-247 - Rail/Tube (Alt: IPW60R040CFD7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$6.0900
  • 1440:$6.1900
  • 960:$6.3900
  • 480:$6.5900
  • 240:$6.8900
IPW60R040CFD7XKSA1
DISTI # 71AC0407		Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes236
  • 500:$8.4000
  • 250:$9.1100
  • 100:$9.5000
  • 50:$10.1400
  • 25:$10.7700
  • 10:$11.2400
  • 1:$12.3200
IPW60R040CFD7XKSA1
DISTI # 726-IPW60R040CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$11.4200
  • 10:$10.3200
  • 25:$9.8400
  • 100:$8.5500
  • 250:$8.1600
  • 500:$7.4400
IPW60R040CFD7XKSA1
DISTI # 2916149		Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W
RoHS: Compliant		236
  • 250:$9.6200
  • 100:$9.9100
  • 50:$10.4600
  • 10:$11.0500
  • 5:$12.5000
  • 1:$13.3700
IPW60R040CFD7XKSA1
DISTI # 2916149		Infineon Technologies AGMOSFET, 600V, 50A, 150DEG C, 227W236
  • 100:£6.7900
  • 50:£7.3000
  • 10:£7.8100
  • 5:£9.0600
  • 1:£9.6400
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可用性
库存:
Available
订购:
1000
输入数量:
IPW60R040CFD7XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$11.42
US$11.42
10
US$10.32
US$103.20
25
US$9.84
US$246.00
100
US$8.55
US$855.00
250
US$8.16
US$2 040.00
500
US$7.44
US$3 720.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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