FDD3860

FDD3860
Mfr. #:
FDD3860
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V N-Channel Power Trench
生命周期:
制造商新产品。
数据表:
FDD3860 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FDD3860 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-252-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
100 V
Id - 连续漏极电流:
6.2 A
Rds On - 漏源电阻:
36 mOhms
Vgs - 栅源电压:
20 V
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
3.1 W
配置:
单身的
频道模式:
增强
商品名:
动力战壕
打包:
卷轴
高度:
2.39 mm
长度:
6.73 mm
系列:
FDD3860
晶体管类型:
1 N-Channel
宽度:
6.22 mm
品牌:
安森美半导体/飞兆半导体
秋季时间:
7 ns
产品类别:
MOSFET
上升时间:
10 ns
出厂包装数量:
2500
子类别:
MOSFET
典型关断延迟时间:
24 ns
典型的开启延迟时间:
16 ns
单位重量:
0.009171 oz
Tags
FDD38, FDD3, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
PowerTrench® MOSFET, N-Channel, 100 V, 29 A, 36 mΩ
***et Europe
Trans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R
***ark
TAPE REEL/100V N-Channel Power Trench MOSFET
***ment14 APAC
MOSFET, N-CH, 100V, 29A, TO-252-3
***rchild Semiconductor
Using Fairchild's proprietary high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDD3860
DISTI # V72:2272_06298605
ON Semiconductor100V N-CHANNEL POWER TRENCH MO1539
  • 1000:$0.5246
  • 500:$0.6206
  • 250:$0.6636
  • 100:$0.7373
  • 25:$0.8610
  • 10:$1.0523
  • 1:$1.2387
FDD3860
DISTI # V36:1790_06298605
ON Semiconductor100V N-CHANNEL POWER TRENCH MO0
  • 2500000:$0.4057
  • 1250000:$0.4060
  • 250000:$0.4381
  • 25000:$0.4971
  • 2500:$0.5072
FDD3860
DISTI # FDD3860CT-ND
ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3121In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
FDD3860
DISTI # FDD3860DKR-ND
ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3121In Stock
  • 1000:$0.5597
  • 500:$0.7089
  • 100:$0.8582
  • 10:$1.1010
  • 1:$1.2300
FDD3860
DISTI # FDD3860TR-ND
ON SemiconductorMOSFET N-CH 100V 6.2A DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 12500:$0.4637
  • 5000:$0.4818
  • 2500:$0.5071
FDD3860
DISTI # 32925263
ON Semiconductor100V N-CHANNEL POWER TRENCH MO2500
  • 2500:$0.4003
FDD3860
DISTI # 31029177
ON Semiconductor100V N-CHANNEL POWER TRENCH MO1539
  • 17:$1.2387
FDD3860
DISTI # FDD3860
ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 7500
  • 25000:€0.3799
  • 15000:€0.4089
  • 10000:€0.4429
  • 5000:€0.4829
  • 2500:€0.5909
FDD3860
DISTI # FDD3860
ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 125000:$0.4918
  • 62500:$0.5000
  • 25000:$0.5172
  • 12500:$0.5357
  • 7500:$0.5556
  • 5000:$0.5769
  • 2500:$0.6000
FDD3860
DISTI # FDD3860
ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD3860)
RoHS: Compliant
Min Qty: 642
Container: Bulk
Americas - 0
  • 6420:$0.4809
  • 3210:$0.4929
  • 1926:$0.4999
  • 1284:$0.5059
  • 642:$0.5089
FDD3860
DISTI # FDD3860
ON SemiconductorTrans MOSFET N-CH 100V 6.2A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD3860)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.5919
  • 15000:$0.6069
  • 10000:$0.6149
  • 5000:$0.6229
  • 2500:$0.6269
FDD3860
DISTI # 08N9273
ON SemiconductorMOSFET Transistor, N Channel, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V0
  • 25000:$0.4430
  • 10000:$0.4570
  • 2500:$0.4740
  • 1:$0.4770
FDD3860
DISTI # 31Y1356
ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.029ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V RoHS Compliant: Yes171
  • 1000:$0.6070
  • 500:$0.7460
  • 250:$0.7890
  • 100:$0.8330
  • 50:$0.9080
  • 25:$0.9830
  • 10:$1.0600
  • 1:$1.2300
FDD3860
DISTI # 512-FDD3860
ON SemiconductorMOSFET 100V N-Channel Power Trench
RoHS: Compliant
3625
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 2500:$0.4590
  • 10000:$0.4420
FDD3860Fairchild Semiconductor CorporationPower Field-Effect Transistor, 6.2A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant
452210
  • 1000:$0.5100
  • 500:$0.5400
  • 100:$0.5600
  • 25:$0.5900
  • 1:$0.6300
FDD3860Fairchild Semiconductor Corporation 81
    FDD3860
    DISTI # 7599071P
    ON SemiconductorMOSFET N-CHANNEL 100V 6.2A DPAK, RL1205
    • 50:£0.4200
    FDD3860Fairchild Semiconductor CorporationPOWER FIELD-EFFECT TRANSISTOR, 6.2A I(D), 100V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252180
    • 72:$0.4900
    • 15:$0.7000
    • 1:$1.4000
    FDD3860
    DISTI # 2453848RL
    ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3
    RoHS: Compliant
    0
    • 10000:$0.6800
    • 2500:$0.7060
    • 1000:$0.7970
    • 500:$1.0100
    • 100:$1.1500
    • 10:$1.4900
    • 1:$1.7600
    FDD3860
    DISTI # 2453848
    ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3
    RoHS: Compliant
    0
    • 10000:$0.6800
    • 2500:$0.7060
    • 1000:$0.7970
    • 500:$1.0100
    • 100:$1.1500
    • 10:$1.4900
    • 1:$1.7600
    FDD3860
    DISTI # XSKDRABV0019225
    ON SEMICONDUCTOR 
    RoHS: Compliant
    7500 in Stock0 on Order
    • 7500:$0.5600
    • 2500:$0.6000
    FDD3860
    DISTI # 2453848
    ON SemiconductorMOSFET, N-CH, 100V, 29A, TO-252-3110
    • 500:£0.5060
    • 250:£0.5390
    • 100:£0.5720
    • 10:£0.8010
    • 1:£1.0000
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    Bipolar Transistors - BJT 100mA 80V NPN
    LT3757EMSE#PBF

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    C3225X7R2J683K200AE

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    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 630V 0.068uF X7R 10% T:2mm SOFT
    RC0603FR-071KL

    Mfr.#: RC0603FR-071KL

    OMO.#: OMO-RC0603FR-071KL

    Thick Film Resistors - SMD 1K OHM 1%
    LM13700MX/NOPB

    Mfr.#: LM13700MX/NOPB

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    Operational Amplifiers - Op Amps Dual OP Amp Transconductance
    06035C224KAT2A

    Mfr.#: 06035C224KAT2A

    OMO.#: OMO-06035C224KAT2A-AVX

    Cap Ceramic 0.22uF 50V X7R 10% Pad SMD 0603 125C T/R
    INA180A4IDBVR

    Mfr.#: INA180A4IDBVR

    OMO.#: OMO-INA180A4IDBVR-TEXAS-INSTRUMENTS

    INA180A4IDBVR
    可用性
    库存:
    Available
    订购:
    1986
    输入数量:
    FDD3860的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格(美元)
    数量
    单价
    小计金额
    1
    US$1.14
    US$1.14
    10
    US$0.97
    US$9.66
    100
    US$0.74
    US$74.20
    500
    US$0.66
    US$328.00
    1000
    US$0.52
    US$518.00
    由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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