FF50R12RT4

Mfr. #:: FF50R12RT4
制造商:: Infineon Technologies
描述:: IGBT Modules IGBT 1200V 50A
生命周期:: 制造商新产品。
数据表:: FF50R12RT4 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌

产品分类: 集成电路芯片

产品: IGBT 硅模块

安装方式: 拧紧

钯功耗: 285 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 1200 V

集电极-发射极-饱和-电压: 2.15 V

25-C 时的连续集电极电流: 50 A

栅极-发射极-漏电流: 100 nA

最大栅极发射极电压: +/- 20 V

Tags: FF50R12R, FF50R12, FF50R1, FF50R, FF50, FF5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
FF50R12RT4HOSA1 DISTI # V99:2348_18206226	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin Tray RoHS: Compliant	20	10:$43.1300 1:$46.4200
FF50R12RT4HOSA1 DISTI # FF50R12RT4HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 50A RoHS: Compliant Min Qty: 1 Container: Bulk	61In Stock	10:$44.9670 1:$48.2000
FF50R12RT4HOSA1 DISTI # 31578446	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin Tray RoHS: Compliant	20	10:$43.1300 1:$46.4200
FF50R12RT4HOSA1 DISTI # 31438986	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin Tray RoHS: Compliant	17	100:$31.5505 50:$32.1984 25:$32.6784 10:$33.1680 5:$34.1472 1:$35.0880
FF50R12RT4 DISTI # 31603571	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin Tray RoHS: Compliant	10	10:$53.9325 5:$56.6100 1:$58.5225
FF50R12RT4HOSA1 DISTI # FF50R12RT4HOSA1	Infineon Technologies AG	MEDIUM POWER 34MM - Trays (Alt: FF50R12RT4HOSA1) RoHS: Compliant Min Qty: 20 Container: Tray	Americas - 0	20:$36.8900 40:$35.5900 60:$34.2900 100:$33.0900 200:$32.4900
FF50R12RT4HOSA1 DISTI # 13AC8660	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:285W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	4	250:$31.2600 100:$32.3100 50:$33.0200 25:$35.4100 10:$37.6200 5:$39.8000 1:$41.9600
FF50R12RT4 DISTI # 641-FF50R12RT4	Infineon Technologies AG	IGBT Modules IGBT 1200V 50A RoHS: Compliant	20	1:$45.9000 5:$44.8800 10:$42.8300 25:$41.0400 100:$37.1900
FF50R12RT4 DISTI # C1S322000166873	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 50A 285000mW 7-Pin 34MM-1 Tray RoHS: Compliant	10	10:$42.3000 5:$44.4000 1:$45.9000
FF50R12RT4HOSA1 DISTI # 2726144	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A RoHS: Compliant	4	10:$71.6800 1:$76.8300
FF50R12RT4HOSA1 DISTI # 2726144	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 50A RoHS: Compliant	4	100:£34.1000 50:£34.8100 10:£35.5200 5:£36.8000 1:£38.0800

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