SI8409DB-T1-E1

Name: Vishay - SI8409DB-T1-E1
Brand: Vishay
SKU: OMO-3379421
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8409DB-T1-E1
制造商:: Vishay
描述:: MOSFET P-CH 30V 4.6A 2X2 4-MFP
生命周期:: 制造商新产品。
数据表:: SI8409DB-T1-E1 数据表
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更多信息:: SI8409DB-T1-E1 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: 集成电路芯片

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI8409DB-E1

安装方式: 贴片/贴片

商品名: TrenchFET/微足

包装盒: 4-XFBGA, CSPBGA

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: 4-Microfoot

配置: 单双漏

FET型: MOSFET P 沟道，金属氧化物

最大功率: 1.47W

晶体管型: 1 P-Channel

漏源电压 Vdss: 30V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 4.6A (Ta)

Rds-On-Max-Id-Vgs: 46 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

栅极电荷-Qg-Vgs: 26nC @ 4.5V

钯功耗: 1.47 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 35 ns

上升时间: 35 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: - 3.6 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 1.052 Ohms

晶体管极性: P-通道

典型关断延迟时间: 140 ns

典型开启延迟时间: 20 ns

Qg-门电荷: 17 nC

正向跨导最小值: 6.4 S

通道模式: 增强

Tags: SI840, SI84, SI8

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8409DB-T1-E1 描述

***ure Electronics: Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT

***ical: Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R

*** Source Electronics: MOSFET P-CH 30V 4.6A 2X2 4-MFP

***i-Key: MOSFET P-CH 30V 4.6A 4MICROFOOT

***ark: P Ch Mosfet, -30V, 6.3A, Micro Foot; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V Rohs Compliant: No

SI8409DB-T1-E1 更多信息

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

型号	制造商	描述	库存	价格
SI8409DB-T1-E1 DISTI # V72:2272_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 10:$0.7658 1:$0.8855
SI8409DB-T1-E1 DISTI # V36:1790_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1CT-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1TR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.4928
SI8409DB-T1-E1 DISTI # 27003823	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 16:$0.7658
SI8409DB-T1-E1 DISTI # 29546570	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4867
SI8409DB-T1-E1 DISTI # 30743480	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8409DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4649 6000:$0.4509 12000:$0.4329 18000:$0.4209 30000:$0.4099
SI8409DB-T1-E1 DISTI # 18X0030	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:1.47W, RoHS Compliant: Yes	0	1:$1.1200 10:$0.9220 25:$0.8510 50:$0.7790 100:$0.7080 500:$0.6090 1000:$0.4800
SI8409DB-T1-E1 DISTI # 51K7013	Vishay Intertechnologies	P CH MOSFET, -30V, 6.3A, MICRO FOOT,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):65mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1. DISTI # 30AC0210	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1	Vishay Intertechnologies	Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT RoHS: Compliant	6000Reel	3000:$0.4050
SI8409DB-T1-E1 DISTI # 781-SI8409DB-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	4620	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.4800 3000:$0.4480
SI8409DB-T1-E1	Vishay Semiconductors	4600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2340	2052:$0.3750 445:$0.3900 1:$1.5000
SI8409DB-T1-E1	Vishay Siliconix		2925	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600 515:$0.3150 1224:$0.2925
SI8409DB-T1-E1 DISTI # XSFP00000107897	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.8100 4038:$0.7364
SI8409DB-T1-E1 DISTI # C1S803601003786	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4407	250:$0.6193 100:$0.6210 25:$0.7598 10:$0.7629
SI8409DB-T1-E1 DISTI # C1S803601906641	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.4299
SI8409DB-T1-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	Americas - 6000

SI8409DB-T1-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes