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BSC020N03MSGATMA1

BSC020N03MSGATMA1
Mfr. #:
BSC020N03MSGATMA1
制造商:
Infineon Technologies
描述:
MOSFET N-CH 30V 100A TDSON-8
生命周期:
制造商新产品。
数据表:
BSC020N03MSGATMA1 数据表
交货:
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ECAD Model:
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
系列
BSC020N03
打包
卷轴
部分别名
BSC020N03MS BSC020N03MSGXT G SP000311503
商品名
优化MOS
包装盒
TDSON-8
技术
硅
通道数
1 Channel
晶体管型
1 N-Channel
晶体管极性
N通道
Tags
BSC020N03MSG, BSC020N03M, BSC020N03, BSC020N0, BSC020, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
型号 制造商 描述 库存 价格
BSC020N03MSGATMA1
DISTI # V72:2272_06384497		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		14781
  • 6000:$0.5427
  • 3000:$0.5754
  • 1000:$0.5814
  • 500:$0.7105
  • 250:$0.7914
  • 100:$0.8004
  • 25:$0.9897
  • 10:$1.0018
  • 1:$1.1348
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10100In Stock
  • 1000:$0.7495
  • 500:$0.9493
  • 100:$1.2241
  • 10:$1.5490
  • 1:$1.7500
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10100In Stock
  • 1000:$0.7495
  • 500:$0.9493
  • 100:$1.2241
  • 10:$1.5490
  • 1:$1.7500
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 5000:$0.6452
BSC020N03MSGATMA1
DISTI # 26195476		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		14781
  • 6000:$0.5420
  • 3000:$0.5746
  • 1000:$0.5805
  • 500:$0.7092
  • 250:$0.7899
  • 100:$0.7988
  • 25:$0.9873
  • 13:$0.9995
BSC020N03MSGATMA1
DISTI # 29543870		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.6475
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP - Tape and Reel (Alt: BSC020N03MSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.5079
  • 10000:$0.4899
  • 20000:$0.4719
  • 30000:$0.4559
  • 50000:$0.4479
BSC020N03MSGATMA1
DISTI # 60R2480		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 100A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes458
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MS G
DISTI # 726-BSC020N03MSG		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant		4204
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MSGATMA1
DISTI # 726-BSC020N03MSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
RoHS: Compliant		4525
  • 1:$1.4500
  • 10:$1.2400
  • 100:$0.9490
  • 500:$0.8380
  • 1000:$0.6620
BSC020N03MSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 25A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		8000
  • 1000:$0.5500
  • 500:$0.5800
  • 100:$0.6100
  • 25:$0.6300
  • 1:$0.6800
BSC020N03MSGATMA1
DISTI # 7545235P		Infineon Technologies AGMOSFET N-CHANNEL 30V 25A OPTIMOS3 TDSON8, RL64
  • 20:£0.8150
  • 40:£0.7700
  • 100:£0.6850
  • 500:£0.6100
BSC020N03MSGATMA1
DISTI # BSC020N03MSGATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,25A,96W,PG-TDSON-84522
  • 1:$0.3400
  • 3:$0.3367
  • 10:$0.3360
  • 100:$0.3357
BSC020N03MSGATMA1
DISTI # 1775430		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		458
  • 5:£0.8160
  • 25:£0.7320
  • 100:£0.7050
  • 250:£0.6780
  • 500:£0.6510
BSC020N03MSGATMA1
DISTI # C1S322000595950		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		14781
  • 250:$0.8159
  • 100:$0.8185
  • 25:$1.0028
  • 10:$1.0074
BSC020N03MSGATMA1
DISTI # C1S322000470934		Infineon Technologies AGTrans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5730
BSC020N03MSGATMA1
DISTI # 1775430		Infineon Technologies AGMOSFET, N CH, 100A, 30V, PG-TDSON-8
RoHS: Compliant		458
  • 1:$2.3000
  • 10:$1.9700
  • 100:$1.5100
  • 500:$1.3300
  • 1000:$1.0500
  • 5000:$0.9490
图片 型号 描述
BSC020N03LS G

Mfr.#: BSC020N03LS G

OMO.#: OMO-BSC020N03LS-G

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03MSGATMA1

Mfr.#: BSC020N03MSGATMA1

OMO.#: OMO-BSC020N03MSGATMA1

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSC020N02LS

Mfr.#: BSC020N02LS

OMO.#: OMO-BSC020N02LS-1190

 全新原装
BSC020N03LS3G

Mfr.#: BSC020N03LS3G

OMO.#: OMO-BSC020N03LS3G-1190

 全新原装
BSC020N03LSG

Mfr.#: BSC020N03LSG

OMO.#: OMO-BSC020N03LSG-1190

 Trans MOSFET N-CH 30V 28A 8-Pin TDSON EP
BSC020N03LSG,1N4148W T/R

Mfr.#: BSC020N03LSG,1N4148W T/R

OMO.#: OMO-BSC020N03LSG-1N4148W-T-R-1190

 全新原装
BSC020N03LSGXT

Mfr.#: BSC020N03LSGXT

OMO.#: OMO-BSC020N03LSGXT-1190

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSC020N03MSGINTR-ND

Mfr.#: BSC020N03MSGINTR-ND

OMO.#: OMO-BSC020N03MSGINTR-ND-1190

 全新原装
BSC020N03LSGATMA2

Mfr.#: BSC020N03LSGATMA2

OMO.#: OMO-BSC020N03LSGATMA2-INFINEON-TECHNOLOGIES

 LV POWER MOS
BSC020N03LS G

Mfr.#: BSC020N03LS G

OMO.#: OMO-BSC020N03LS-G-128

 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
可用性
库存:
Available
订购:
5000
输入数量:
BSC020N03MSGATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.50
US$0.50
10
US$0.47
US$4.70
100
US$0.45
US$44.55
500
US$0.42
US$210.40
1000
US$0.40
US$396.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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