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IPW65R190CFD

IPW65R190CFD
Mfr. #:
IPW65R190CFD
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
生命周期:
制造商新产品。
数据表:
IPW65R190CFD 数据表
交货:
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ECAD Model:
更多信息:
IPW65R190CFD 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
650 V
Id - 连续漏极电流：
17.5 A
Rds On - 漏源电阻：
190 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
68 nC
Pd - 功耗：
151 W
配置：
单身的
商品名：
酷摩
打包：
管子
高度：
21.1 mm
长度：
16.13 mm
系列：
CoolMOS CFD2
晶体管类型：
1 N-Channel
宽度：
5.21 mm
品牌：
英飞凌科技
秋季时间：
6.4 ns
产品类别：
MOSFET
上升时间：
8.4 ns
出厂包装数量：
240
子类别：
MOSFET
第 # 部分别名：
IPW65R190CFDFKSA1 IPW65R19CFDXK SP000905376
单位重量：
1.340411 oz
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Switch Mode Power Supplies (SMPS)
Infineon Technologies offers a wide range of cost-effective products for consumer Switch Mode Power Supplies (SMPS). This includes high voltage MOSFETs, control IC's and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.Learn More
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
Infineon SMPS - High Power Topology
Infineon Technologies SMPS High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (eg. 12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power application for reasons such as its inherent Zero Voltage Switching for the primary side switches.Learn More
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPW65R190CFD
DISTI # 30610570		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247
RoHS: Compliant		514
  • 480:$2.8178
  • 100:$2.9707
  • 50:$3.3915
  • 10:$4.0163
  • 6:$4.4880
IPW65R190CFDAFKSA1
DISTI # 31039088		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 100:$3.3600
  • 10:$3.8784
IPW65R190CFDFKSA1
DISTI # IPW65R190CFDFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1200:$2.1893
  • 720:$2.5513
  • 240:$3.0942
  • 10:$3.7200
  • 1:$4.1400
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$4.0468
IPW65R190CFD
DISTI # C1S322000415991		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		514
  • 480:$2.2100
  • 100:$2.3300
  • 50:$2.6600
  • 10:$3.1500
  • 1:$3.5200
IPW65R190CFD
DISTI # IPW65R190CFD		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: IPW65R190CFD)
RoHS: Compliant
Min Qty: 240		Asia - 240
  • 240:$2.1092
  • 480:$2.0087
  • 720:$1.9773
  • 1200:$1.8888
  • 2400:$1.8610
  • 6000:$1.8079
  • 12000:$1.7576
IPW65R190CFD
DISTI # IPW65R190CFDFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IPW65R190CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$1.7900
  • 480:$1.6900
  • 960:$1.5900
  • 1440:$1.5900
  • 2400:$1.5900
IPW65R190CFD
DISTI # SP000905376		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-247 (Alt: SP000905376)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.8900
  • 10:€1.6900
  • 25:€1.5900
  • 50:€1.5900
  • 100:€1.4900
  • 500:€1.4900
  • 1000:€1.3900
IPW65R190CFDFKSA2
DISTI # IPW65R190CFDFKSA2		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190CFDFKSA2)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240    		Asia - 0
      IPW65R190CFDAFKSA1
      DISTI # IPW65R190CFDAFKSA1      		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
      RoHS: Compliant
      Min Qty: 240
      Container: Tube      		Americas - 0
      • 240:$2.4900
      • 480:$2.3900
      • 960:$2.3900
      • 1440:$2.2900
      • 2400:$2.1900
      IPW65R190CFDAFKSA1
      DISTI # SP000928268      		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
      RoHS: Compliant
      Min Qty: 1      		Europe - 0
      • 1:€3.0900
      • 10:€2.4900
      • 25:€2.2900
      • 50:€2.1900
      • 100:€2.0900
      • 500:€2.0900
      • 1000:€1.9900
      IPW65R190CFDFKSA1
      DISTI # 85X6044      		Infineon Technologies AGMOSFET Transistor, N Channel, 17.5 A, 700 V, 0.445 ohm, 10 V, 4 V , RoHS Compliant: Yes0
        IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant        		240
        • 1000:$2.7100
        • 500:$2.8500
        • 100:$2.9700
        • 25:$3.0900
        • 1:$3.3300
        IPW65R190CFDFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
        RoHS: Compliant        		6
        • 1000:$1.9100
        • 500:$2.0100
        • 100:$2.1000
        • 25:$2.1900
        • 1:$2.3500
        IPW65R190CFD
        DISTI # 726-IPW65R190CFD        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2
        RoHS: Compliant        		0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDFKSA2
        DISTI # 726-IPW65R190CFDFKSA        		Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
        RoHS: Compliant        		0
        • 1:$3.3500
        • 10:$2.8500
        • 100:$2.4700
        IPW65R190CFDAFKSA1
        DISTI # 726-IPW65R190CFDAFKS        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant        		187
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDA
        DISTI # 726-IPW65R190CFDA        		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
        RoHS: Compliant        		11
        • 1:$4.7600
        • 10:$4.0400
        • 100:$3.5000
        IPW65R190CFDAFKSA1
        DISTI # 8577129        		Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU480
        • 240:£1.6600
        • 1200:£1.6270
        IPW65R190CFDFKSA1
        DISTI # 9064384P        		Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, TU96
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # 9064384        		Infineon Technologies AGMOSFET N-CH 650V 17.5A COOLMOS TO247, PK200
        • 4:£2.3950
        • 20:£1.9900
        • 80:£1.7700
        • 200:£1.6380
        • 400:£1.6050
        IPW65R190CFDFKSA1
        DISTI # IPW65R190CFDFKSA1        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,17.5A,151W,PG-TO247-348
        • 1:$3.6900
        • 3:$3.1900
        • 10:$2.5600
        • 30:$2.2300
        IPW65R190CFDFKSA1
        DISTI # 2443410        		Infineon Technologies AGMOSFET, N CH, 700V, 17.5A, TO-247-3
        RoHS: Compliant        		0
        • 1:$5.3100
        • 10:$4.5100
        • 100:$3.9100
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        可用性
        库存:
        470
        订购:
        2453
        输入数量:
        IPW65R190CFD的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$3.35
        US$3.35
        10
        US$2.84
        US$28.40
        100
        US$2.46
        US$246.00
        250
        US$2.34
        US$585.00
        500
        US$2.10
        US$1 050.00
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