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FDMS3660S

FDMS3660S
Mfr. #:
FDMS3660S
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET PowerStage Dual N-Ch PowerTrench MOSFET
生命周期:
制造商新产品。
数据表:
FDMS3660S 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDMS3660S DatasheetFDMS3660S Datasheet (P4-P6)FDMS3660S Datasheet (P7-P9)FDMS3660S Datasheet (P10-P12)FDMS3660S Datasheet (P13-P15)FDMS3660S Datasheet (P16)
ECAD Model:
更多信息:
FDMS3660S 更多信息
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-56-8
通道数：
2 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
13 A, 30 A
Rds On - 漏源电阻：
8 mOhms, 1.8 mOhms
Vgs - 栅源电压：
20 V, 12 V
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
2.2 W, 2.5 W
配置：
双重的
商品名：
功率级 PowerTrench
打包：
卷轴
高度：
1.1 mm
长度：
6 mm
系列：
FDMS3660S
晶体管类型：
2 N-Channel
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.006032 oz
Tags
FDMS3660S, FDMS3660, FDMS366, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 30V 60A/145A 8-Pin Power 56 T/R
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 8 /1.8 mO 21 / 62 nC PowerTrench Asymmetric Mosfet - Power56
*** Stop Electro
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, DUAL N CH, 30V, 60A, POWER 56-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***emi
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 75A N-Channel
***ment14 APAC
N CHANNEL MOSFET, 25V, 75A, D-PAK
***(Formerly Allied Electronics)
SIS330DN-T1-GE3 N-channel MOSFET Transistor; 19 A; 30 V; 8-Pin PowePAK 1212
***et
Trans MOSFET N-CH 30V 19.1A 8-Pin PowerPAK 1212 T/R
***or
MOSFET N-CH 30V 35A PPAK1212-8
*** Electronics
MOSFET 30 Volts 35 Amps 52 Watts
***S
French Electronic Distributor since 1988
***nell
MOSFET, N CH, 30V, 35A, PPK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***et
Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R
***ure Electronics
MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV
***nsix Microsemi
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 30V, 38.3A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:38.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:19.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited
***mal
N-Ch PowerPAK1212 BWL 30V 7.5mohm@10V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Fairchild PowerTrench MOSFETs
FDMS366xS PowerTrench® Power Stage MOSFETs
ON Semiconductor's FDMS366xS PowerTrench® Power Stage MOSFETs include two specialized N-Channel MOSFETs in a dual PQFN package. Low inductance packaging shortens rise/fall times, resulting in lower switching losses. Integration of the two MOSFETs enables optimum layout for lower circuit inductance and reduced switch node ringing. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
型号 制造商 描述 库存 价格
FDMS3660S
DISTI # V79:2366_17786121		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R1480
  • 24000:$0.4520
  • 9000:$0.4667
  • 3000:$0.4782
  • 1000:$0.5241
  • 500:$0.6677
  • 100:$0.7772
  • 10:$1.0037
  • 1:$1.2798
FDMS3660S
DISTI # V72:2272_06338050		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R170
  • 100:$0.7539
  • 25:$1.0045
  • 10:$1.0225
  • 1:$1.3052
FDMS3660S
DISTI # V36:1790_06338050		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R0
  • 3000000:$0.4291
  • 1500000:$0.4295
  • 300000:$0.4646
  • 30000:$0.5304
  • 3000:$0.5416
FDMS3660S
DISTI # FDMS3660SFSCT-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2790In Stock
  • 1000:$0.5976
  • 500:$0.7570
  • 100:$0.9164
  • 10:$1.1750
  • 1:$1.3100
FDMS3660S
DISTI # FDMS3660SFSDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2790In Stock
  • 1000:$0.5976
  • 500:$0.7570
  • 100:$0.9164
  • 10:$1.1750
  • 1:$1.3100
FDMS3660S-F121
DISTI # FDMS3660S-F121TR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS3660S-F121
    DISTI # FDMS3660S-F121CT-ND    		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      FDMS3660S-F121
      DISTI # FDMS3660S-F121DKR-ND      		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        FDMS3660S
        DISTI # FDMS3660SFSTR-ND        		ON SemiconductorMOSFET 2N-CH 30V 13A/30A 8-PQFN
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 15000:$0.4951
        • 6000:$0.5145
        • 3000:$0.5415
        FDMS3660S
        DISTI # 26115018        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R1480
        • 31:$1.2798
        FDMS3660S
        DISTI # 25979820        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 EP T/R170
        • 13:$1.3052
        FDMS3660S
        DISTI # FDMS3660S        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R (Alt: FDMS3660S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel        		Asia - 0
        • 150000:$0.6039
        • 75000:$0.6140
        • 30000:$0.6352
        • 15000:$0.6579
        • 9000:$0.6822
        • 6000:$0.7085
        • 3000:$0.7368
        FDMS3660S
        DISTI # FDMS3660S        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3660S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel        		Americas - 0
        • 30000:$0.4539
        • 18000:$0.4659
        • 12000:$0.4719
        • 6000:$0.4779
        • 3000:$0.4809
        FDMS3660S
        DISTI # FDMS3660S        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R - Bulk (Alt: FDMS3660S)
        Min Qty: 313
        Container: Bulk        		Americas - 0
        • 3130:$0.9869
        • 1565:$1.0119
        • 939:$1.0249
        • 626:$1.0379
        • 313:$1.0449
        FDMS3660S
        DISTI # FDMS3660S        		ON SemiconductorTrans MOSFET N-CH 30V 13A/30A 8-Pin Power 56 T/R (Alt: FDMS3660S)
        RoHS: Compliant
        Min Qty: 3000
        Container: Tape and Reel        		Europe - 0
        • 30000:€0.4569
        • 18000:€0.4919
        • 12000:€0.5329
        • 6000:€0.5819
        • 3000:€0.7109
        FDMS3660S
        DISTI # 95W3165        		ON SemiconductorDual MOSFET, Dual N Channel, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V RoHS Compliant: Yes8228
        • 1000:$0.5130
        • 500:$0.6490
        • 100:$0.7350
        • 10:$0.9570
        • 1:$1.1200
        FDMS3660S.
        DISTI # 29AC6266        		Fairchild Semiconductor CorporationERTRENCH ERSTAGE ASYMMET ROHS COMPLIANT: YES0
        • 30000:$0.4540
        • 18000:$0.4660
        • 12000:$0.4720
        • 6000:$0.4780
        • 1:$0.4810
        FDMS3660S
        DISTI # 512-FDMS3660S        		ON SemiconductorMOSFET PowerStage Dual N-Ch PowerTrench MOSFET
        RoHS: Compliant        		2796
        • 1:$1.2000
        • 10:$1.0300
        • 100:$0.7920
        • 500:$0.6990
        • 1000:$0.5520
        • 3000:$0.4890
        • 9000:$0.4710
        FDMS3660S_F121
        DISTI # 512-FDMS3660S_F121        		ON SemiconductorMOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET
        RoHS: Compliant        		3842
        • 1:$1.6200
        • 10:$1.3800
        • 100:$1.1000
        • 500:$0.9630
        • 1000:$0.7980
        • 3000:$0.7430
        • 6000:$0.7160
        • 9000:$0.6880
        FDMS3660SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
        RoHS: Compliant        		9907
        • 1000:$0.5400
        • 500:$0.5700
        • 100:$0.5900
        • 25:$0.6200
        • 1:$0.6600
        FDMS3660SFairchild Semiconductor Corporation 1134
          FDMS3660S
          DISTI # 2322592          		ON SemiconductorMOSFET, DUAL N CH, 30V, 60A, POWER 56-8
          RoHS: Compliant          		11228
          • 1000:$0.7820
          • 500:$0.9890
          • 100:$1.1300
          • 10:$1.4600
          • 1:$1.7100
          FDMS3660S
          DISTI # 2322592          		ON SemiconductorMOSFET, DUAL N CH, 30V, 60A, POWER 56-88268
          • 500:£0.5010
          • 250:£0.5340
          • 100:£0.5670
          • 10:£0.7950
          • 1:£0.9860
          FDMS3660SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
          RoHS: Compliant          		1695
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            可用性
            库存:
            Available
            订购:
            1985
            输入数量:
            FDMS3660S的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
            参考价格（美元）
            数量
            单价
            小计金额
            1
            US$1.20
            US$1.20
            10
            US$1.03
            US$10.30
            100
            US$0.79
            US$79.20
            500
            US$0.70
            US$349.50
            1000
            US$0.55
            US$552.00
            由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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