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CSD25213W10

CSD25213W10
Mfr. #:
CSD25213W10
描述:
MOSFET P-CH 20V 1.6A 4DSBGA
生命周期:
制造商新产品。
数据表:
CSD25213W10 数据表
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CSD25213W10 更多信息 CSD25213W10 Product Details
产品属性
属性值
制造商
德州仪器
产品分类
晶体管 - FET、MOSFET - 单
系列
CSD25213W10
打包
卷轴
安装方式
贴片/贴片
商品名
场效应管
包装盒
DSBGA-4
技术
硅
通道数
1 Channel
配置
单通道
晶体管型
1 P-Channel
钯功耗
1 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
970 ns
上升时间
520 ns
VGS-栅极-源极-电压
- 6 V
Id 连续漏极电流
- 1.6 A
Vds-漏-源-击穿电压
- 20 V
VGS-th-Gate-Source-Threshold-Voltage
- 850 mV
Rds-On-Drain-Source-Resistance
47 mOhms
晶体管极性
P-通道
典型关断延迟时间
1 us
典型开启延迟时间
510 ns
Qg-门电荷
2.2 nC
通道模式
增强
Tags
CSD252, CSD25, CSD2, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
-20V, P ch NexFET MOSFET™, single WLP 1.0x1.0, 47mOhm 4-DSBGA -55 to 150
***p One Stop Global
Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R
***i-Key
MOSFET P-CH 20V 1.6A 4DSBGA
***ark
20V Pch Mosfet
NexFET P-Channel Power MOSFETs
OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.
TI P-Channel MOSFETs - 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD25213W10
DISTI # 296-40004-1-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-6-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5685In Stock
  • 1000:$0.1570
  • 500:$0.2094
  • 100:$0.3053
  • 10:$0.4450
  • 1:$0.5700
CSD25213W10
DISTI # 296-40004-2-ND		MOSFET P-CH 20V 1.6A 4DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.1228
  • 6000:$0.1313
  • 3000:$0.1398
CSD25213W10
DISTI # CSD25213W10		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 6000:$0.1109
  • 12000:$0.1059
  • 18000:$0.1019
  • 30000:$0.0989
  • 60000:$0.0959
CSD25213W10
DISTI # CSD25213W10		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    CSD25213W10
    DISTI # CSD25213W10    		Trans MOSFET P-CH 20V 1.6A 4-Pin DSBGA T/R (Alt: CSD25213W10)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.1779
    • 6000:€0.1359
    • 12000:€0.1219
    • 18000:€0.1009
    • 30000:€0.0929
    CSD25213W10P-Channel NexFET&#153,Power MOSFET6000
    • 1000:$0.0900
    • 750:$0.1000
    • 500:$0.1200
    • 250:$0.1500
    • 100:$0.1600
    • 25:$0.1900
    • 10:$0.2100
    • 1:$0.2300
    CSD25213W10
    DISTI # 595-CSD25213W10    		MOSFET P-CH NexFET Pwr MOSFET
    RoHS: Compliant    		10655
    • 1:$0.4500
    • 10:$0.3400
    • 100:$0.1850
    • 1000:$0.1390
    • 3000:$0.1200
    图片 型号 描述
    CSD25310Q2

    Mfr.#: CSD25310Q2

    OMO.#: OMO-CSD25310Q2

    		 MOSFET 20-V P-CH NexFET Pwr MOSFET
    CSD25404Q3

    Mfr.#: CSD25404Q3

    OMO.#: OMO-CSD25404Q3

    		 MOSFET 20V Pch MOSFET
    CSD25484F4T

    Mfr.#: CSD25484F4T

    OMO.#: OMO-CSD25484F4T

    		 MOSFET 20V P-Ch FemtoFET MOSFET
    CSD25202W15T

    Mfr.#: CSD25202W15T

    OMO.#: OMO-CSD25202W15T

    		 MOSFET 20V PCh NexFET Pwr MOSFET
    CSD25301W1015

    Mfr.#: CSD25301W1015

    OMO.#: OMO-CSD25301W1015

    		 MOSFET P-Ch NexFET Power MOSFETs
    CSD25401Q3

    Mfr.#: CSD25401Q3

    OMO.#: OMO-CSD25401Q3

    		 MOSFET P-Ch NexFET Power MOSFETs
    CSD25301W1015

    Mfr.#: CSD25301W1015

    OMO.#: OMO-CSD25301W1015-TEXAS-INSTRUMENTS

    		 MOSFET P-CH 20V 2.2A 6DSBGA
    CSD2540Q3A

    Mfr.#: CSD2540Q3A

    OMO.#: OMO-CSD2540Q3A-TEXAS-INSTRUMENTS

    		 全新原装
    CSD25480F3

    Mfr.#: CSD25480F3

    OMO.#: OMO-CSD25480F3-TEXAS-INSTRUMENTS

    		 MOSFET P-CH 20V 1.7A PICOSTAR
    CSD25483F4

    Mfr.#: CSD25483F4

    OMO.#: OMO-CSD25483F4-TEXAS-INSTRUMENTS

    		 Trans MOSFET P-CH 20V 1.6A 3-Pin PICOSTAR T/R
    可用性
    库存:
    Available
    订购:
    4000
    输入数量:
    CSD25213W10的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$0.14
    US$0.14
    10
    US$0.13
    US$1.28
    100
    US$0.12
    US$12.15
    500
    US$0.11
    US$57.40
    1000
    US$0.11
    US$108.00
    从...开始
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