SI7852DP-T1-E3

Mfr. #:: SI7852DP-T1-E3
制造商:: Vishay
描述:: MOSFET N-CH 80V 7.6A PPAK SO-8
生命周期:: 制造商新产品。
数据表:: SI7852DP-T1-E3 数据表
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产品属性
属性值

制造商: 威世

产品分类: FET - 单

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI7852DP-E3

单位重量: 0.017870 oz

安装方式: 贴片/贴片

包装盒: PowerPAKR SO-8

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 1 Channel

供应商-设备-包: PowerPAKR SO-8

配置: 单身的

FET型: MOSFET N 沟道，金属氧化物

最大功率: 1.9W

晶体管型: 1 N-Channel

漏源电压 Vdss: 80V

输入电容-Ciss-Vds: -

FET-Feature: 标准

Current-Continuous-Drain-Id-25°C: 7.6A (Ta)

Rds-On-Max-Id-Vgs: 16.5 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2V @ 250μA (Min)

栅极电荷-Qg-Vgs: 41nC @ 10V

钯功耗: 1.9 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 11 ns

上升时间: 11 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 7.6 A

Vds-漏-源-击穿电压: 80 V

Rds-On-Drain-Source-Resistance: 16.5 mOhms

晶体管极性: N通道

典型关断延迟时间: 40 ns

典型开启延迟时间: 17 ns

通道模式: 增强

Tags: SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7852DP-T1-E3 描述

***ure Electronics: Single N-Channel 80 V 16.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***et Europe: Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R

***ied Electronics & Automation: TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R

***i-Key: MOSFET N-CH 80V 7.6A PPAK SO-8

***ser: N-Channel MOSFETs 80V 12.5A 5.2W

***: N-CHANNEL 80-V (D-S) MOS

***ponent Electronics: IC SMT ON TAPE

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:12.5A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:7.6A; Package / Case:PowerPAK SO-8; Power Dissipation Pd:1.9W; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:7.6A; Resistance, Rds On:10.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:50A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:41nC; No. of Pins:8; Power Dissipation:1.9W; Power, Pd:1.9W; Quantity, Reel:3000; Resistance, Rds on Max:0.0165ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25K; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:80V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2V; Width, External:6.2mm; Width, Tape:12mm

Market price

型号	制造商	描述	库存	价格
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3-ND	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1000:$1.0616 500:$1.2813 100:$1.6474 10:$2.0500 1:$2.2700
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000	3000:$1.1369 6000:$1.1029 12000:$1.0589 18000:$1.0289 30000:$1.0019
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7852DP-T1-E3 DISTI # 06J8172	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 06J8172) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$3.6700 25:$3.0500 50:$2.7100 100:$2.3600 250:$2.2200 500:$2.0800 1000:$1.7200
SI7852DP-T1-E3 DISTI # 29X0550	Vishay Intertechnologies	MOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.5700 3000:$1.5600 6000:$1.4900 12000:$1.3200
SI7852DP-T1-E3 DISTI # 06J8172	Vishay Intertechnologies	N CHANNEL MOSFET, 80V, 12.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$3.0600 25:$2.5400 50:$2.2600 100:$1.9700 250:$1.8500 500:$1.7300 1000:$1.4300
SI7852DP-T1-E3 DISTI # 70026416	Vishay Siliconix	TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R RoHS: Compliant	0	3000:$1.4600
SI7852DP-T1-E3 DISTI # 781-SI7852DP-E3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.0600 10:$2.5400 100:$1.9700 500:$1.7300 1000:$1.4300 3000:$1.3300 6000:$1.2800
SI7852DP-T1 DISTI # 781-SI7852DP	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Not compliant	0
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	8	2:$2.8500 1:$3.8000
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	4	3:$1.9600 1:$2.4500
SI7852DP-T1-E3	Vishay Intertechnologies	INSTOCK	400
SI7852DP-T1-E3 DISTI # 1470137	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:£2.0200 10:£1.6200 100:£1.2900 250:£1.1500 500:£1.0100
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8	Americas -
SI7852DP-T1-E3 DISTI # 1470137	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:$3.7100 10:$3.3500 100:$2.6900 500:$2.0900 1000:$1.7400
SI7852DP-T1-E3 DISTI # 1470137RL	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:$3.7100 10:$3.3500 100:$2.6900 500:$2.0900 1000:$1.7400

图片	型号	描述
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
	Mfr.#: SI7852DP OMO.#: OMO-SI7852DP-1190	全新原装
	Mfr.#: SI7852DP-T1 OMO.#: OMO-SI7852DP-T1-1190	MOSFET RECOMMENDED ALT 781-SI7852DP-E3
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3-VISHAY	MOSFET N-CH 80V 7.6A PPAK SO-8
	Mfr.#: SI7852DP-T1-E3. OMO.#: OMO-SI7852DP-T1-E3--1190	全新原装
	Mfr.#: SI7852DP-TI-E3 OMO.#: OMO-SI7852DP-TI-E3-1190	全新原装
	Mfr.#: SI7852DPT1 OMO.#: OMO-SI7852DPT1-1190	全新原装

SI7852DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes