We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| PSMN070-200B,118 DISTI # 1727-4775-1-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1263In Stock |
|
| PSMN070-200B,118 DISTI # 1727-4775-6-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1263In Stock |
|
| PSMN070-200B,118 DISTI # 1727-4775-2-ND | Nexperia | MOSFET N-CH 200V 35A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 800In Stock |
|
| PSMN070-200B,118 DISTI # PSMN070-200B,118 | Nexperia | Trans MOSFET N-CH 200V 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN070-200B,118) RoHS: Compliant Min Qty: 4800 Container: Reel | Americas - 3200 | |
| PSMN070-200B,118 DISTI # PSMN070-200B118 | Nexperia | Trans MOSFET N-CH 200V 35A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: PSMN070-200B118) RoHS: Not Compliant Min Qty: 261 Container: Bulk | Americas - 0 |
|
| PSMN070-200B,118 DISTI # 771-PSMN070-200B118 | Nexperia | MOSFET TAPE13 PWR-MOS RoHS: Compliant | 0 | |
| PSMN070-200B118 | NXP Semiconductors | Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 200 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: PSMN070-200B OMO.#: OMO-PSMN070-200B-1190 |
全新原装 |
|
|
Mfr.#: PSMN070-200B/T3 OMO.#: OMO-PSMN070-200B-T3-1190 |
全新原装 |
|
|
Mfr.#: PSMN070-200B118 OMO.#: OMO-PSMN070-200B118-1190 |
Now Nexperia PSMN070-200B - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: PSMN070-200B_15 OMO.#: OMO-PSMN070-200B-15-1190 |
全新原装 |
|
|
Mfr.#: PSMN070-200P OMO.#: OMO-PSMN070-200P-1190 |
- Bulk (Alt: PSMN070-200P) |
|
|
Mfr.#: PSMN070-200P/B OMO.#: OMO-PSMN070-200P-B-1190 |
全新原装 |
|
|
Mfr.#: PSMN070-200P127 OMO.#: OMO-PSMN070-200P127-1190 |
Now Nexperia PSMN070-200P - Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIL3P |
|
Mfr.#: PSMN070-200B,118 |
MOSFET TAPE13 PWR-MOS |
|
Mfr.#: PSMN070-200P,127 |
MOSFET RAIL PWR-MOS |