CSD87312Q3E

Mfr. #: CSD87312Q3E
制造商: Texas Instruments
描述: MOSFET Dual 30V N-CH NexFET Pwr MOSFETs
生命周期: 制造商新产品。
数据表: CSD87312Q3E 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87312Q3E Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 30 V 27 A continuous drain current Rds On value of 33 mOhms Gate-Source Threshold Voltage Range: 800 mV Gate-Source Voltage: 8 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.5 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 39 S 2.9 ns fall time MOSFET product type Rise Time is 16 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 17 ns. The typical turn-on delay time is 7.8 ns. 1. 0.001101 oz of Unit Weight

CSD87312Q3E Image

CSD87312Q3E

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87312Q3E Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 30 V
  • Id - Continuous Drain Current: 27 A
  • Rds On - Drain-Source Resistance: 33 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 800 mV
  • Vgs - Gate-Source Voltage: 8 V
  • Qg - Gate Charge: 6.3 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.5 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD87312Q3E
  • Transistor Type: 2 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 39 S
  • Fall Time: 2.9 ns
  • Product Type: MOSFET
  • Rise Time: 16 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 17 ns
  • Typical Turn-On Delay Time: 7.8 ns
  • Unit Weight: 0.001101 oz

CSD87312Q3E

CSD87312Q3E Specifications

CSD87312Q3E FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is VSON-8.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 2 Channel

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 30 V

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 27 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 33 mOhms.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 800 mV.

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 8 V

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 2.5 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 3.3 mm

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 2 N-Channel.

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: What is the Forward Transconductance - Min of the product?

    Q: The Forward Transconductance - Min of the product is 39 S.

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 2.9 ns.

  • A: At what frequency does the Product Type?

    Q: The product Product Type is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 16 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 2500

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 17 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 7.8 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.001101 oz.

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数量
单价
小计金额
1
US$1.01
US$1.01
10
US$0.86
US$8.60
100
US$0.66
US$66.30
500
US$0.59
US$293.00
1000
US$0.46
US$462.00
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