| Mfr. #: | MRF085HR3 |
|---|---|
| 制造商: | NXP Semiconductors |
| 描述: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 85 W CW over 1.8-1215 MHz, 50 V. |
| 生命周期: | 制造商新产品。 |
| 数据表: | MRF085HR3 数据表 |


This product is manufactured by NXP. 210 mA continuous drain current Vds rating of - 500 mV, 133 V 25.6 dB is 11.5 dB. Output power: 85 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-650H-4 package/case type is utilized by this product. Reel packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. 235 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.5 V This product is also known by the 935351494128 number of 934069005115. 1. 0 oz of Unit Weight

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MRF085HR3 Specifications
A: Is the cutoff frequency of the product Manufacturer?
Q: Yes, the product's Manufacturer is indeed NXP
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 210 mA.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is - 500 mV, 133 V.
A: What is the Gain of the product?
Q: The Gain of the product is 25.6 dB.
A: At what frequency does the Output Power?
Q: The product Output Power is 85 W.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: At what frequency does the Package / Case?
Q: The product Package / Case is NI-650H-4.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: At what frequency does the Type?
Q: The product Type is RF Power MOSFET.
A: At what frequency does the Brand?
Q: The product Brand is NXP Semiconductors.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 2 Channel.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 235 W
A: Is the cutoff frequency of the product Product Type?
Q: Yes, the product's Product Type is indeed RF MOSFET Transistors
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 250.
A: What is the Subcategory of the product?
Q: The Subcategory of the product is MOSFETs.
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed - 6 V, 10 V
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.5 V.
A: At what frequency does the Part # Aliases?
Q: The product Part # Aliases is 935351494128.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0 oz.