PRF13750HR9

Mfr. #: PRF13750HR9
制造商: NXP Semiconductors
描述: RF MOSFET Transistors Pre- Production RF transistor 915MHz
生命周期: 制造商新产品。
数据表: PRF13750HR9 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PRF13750HR9 Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Id - Continuous Drain Current: 2.8 A
  • Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
  • Gain: 19.5 dB
  • Output Power: 750 W
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 150 C
  • Mounting Style: SMD/SMT
  • Package / Case: NI-1230H-4S-4
  • Operating Frequency: 0.7 GHz to 1.3 GHz
  • Series: MRF13750H
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Number of Channels: 2 Channel
  • Product Type: RF MOSFET Transistors
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: - 6 V, 10 V
  • Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9

PRF13750HR9 Specifications

PRF13750HR9 FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is NXP.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 2.8 A.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is - 500 mV, 105 V.

  • A: At what frequency does the Gain?

    Q: The product Gain is 19.5 dB.

  • A: At what frequency does the Output Power?

    Q: The product Output Power is 750 W.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 40 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed NI-1230H-4S-4

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is NXP Semiconductors.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 2 Channel

  • A: At what frequency does the Product Type?

    Q: The product Product Type is RF MOSFET Transistors.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1.3 V.

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