STGF6M65DF2

STGF6M65DF2 Overview

This product is manufactured by STMicroelectronics. TO-220FP-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 12 A 24.2 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 12 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: +/- 250 uA IGBT Transistors product type 1000 of 100 IGBTs as subcategory 1. 0.068784 oz of Unit Weight

STGF6M65DF2 Image

STGF6M65DF2 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-220FP-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.55 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 12 A
• Pd - Power Dissipation: 24.2 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGF6M65DF2
• Continuous Collector Current Ic Max: 12 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: +/- 250 uA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 1000
• Subcategory: IGBTs
• Unit Weight: 0.068784 oz

STGF6M65DF2 FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed STMicroelectronics

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-220FP-3.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Collector- Emitter Voltage VCEO Max of the product?

  Q: The Collector- Emitter Voltage VCEO Max of the product is 650 V.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.55 V.

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 12 A

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 24.2 W.

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 55 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: Is the cutoff frequency of the product Continuous Collector Current Ic Max?

  Q: Yes, the product's Continuous Collector Current Ic Max is indeed 12 A

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is +/- 250 uA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 1000.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 0.068784 oz