STGW10M65DF2

STGW10M65DF2 Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 20 A 115 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 20 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 uA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.211644 oz of Unit Weight

STGW10M65DF2 Image

STGW10M65DF2 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.55 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 20 A
• Pd - Power Dissipation: 115 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGW10M65DF2
• Continuous Collector Current Ic Max: 20 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 uA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.211644 oz

STGW10M65DF2 FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is STMicroelectronics.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed TO-247-3

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.55 V.

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 20 A.

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 115 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: What is the Continuous Collector Current Ic Max of the product?

  Q: The Continuous Collector Current Ic Max of the product is 20 A.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is 250 uA.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed IGBT Transistors

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 600

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.211644 oz.