STGW15S120DF3

STGW15S120DF3 Overview

This product is manufactured by STMicroelectronics. TO247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1.2 kV. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 30 A 259 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 15 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.191185 oz of Unit Weight

STGW15S120DF3 Image

STGW15S120DF3 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 1.55 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 30 A
• Pd - Power Dissipation: 259 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGW15S120DF3
• Packaging: Tube
• Continuous Collector Current Ic Max: 15 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.191185 oz

STGW15S120DF3 FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is STMicroelectronics.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is TO247-3.

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 1.2 kV

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.55 V.

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 30 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 259 W.

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 55 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Continuous Collector Current Ic Max of the product?

  Q: The Continuous Collector Current Ic Max of the product is 15 A.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 600

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.191185 oz.