STGW60H65DRF

STGW60H65DRF Overview

This product is manufactured by STMicroelectronics. TO-247 package/case type is utilized by this product. The product can operate at a maximum temperature of SMD/SMT. The maximum 650 V. The 1.9 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 360 W Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.229281 oz of Unit Weight

STGW60H65DRF Image

STGW60H65DRF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-247
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 120 A
• Pd - Power Dissipation: 360 W
• Series: STGW60H65DRF
• Packaging: Tube
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.229281 oz

STGW60H65DRF FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO-247.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: What is the Collector- Emitter Voltage VCEO Max of the product?

  Q: The Collector- Emitter Voltage VCEO Max of the product is 650 V.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.9 V.

• A: At what frequency does the Maximum Gate Emitter Voltage?

  Q: The product Maximum Gate Emitter Voltage is 20 V.

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 360 W.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 600.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.

• A: At what frequency does the Unit Weight?

  Q: The product Unit Weight is 0.229281 oz.