| Mfr. #: | BD237 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT NPN General Purpose |
| 生命周期: | 制造商新产品。 |
| 数据表: | BD237 数据表 |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product SMD/SMT Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 25 @ 1A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 600mV @ 100mA, 1A Power-off control: 25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 80 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.6 V The 80 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Gain-Bandwidth-Product: 3 MHz This product is capable of handling a 2 A continuous collector current. Minimum hfe for DC collector-base gain is 40.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD237 Specifications
A: What is the Series of the product?
Q: The Series of the product is 500V Transistors.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-225AA, TO-126-3
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SOT-32-3
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 2A
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 80V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 25 @ 1A, 2V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 600mV @ 100mA, 1A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 25 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 80 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: What is the Collector-Emitter-Saturation-Voltage of the product?
Q: The Collector-Emitter-Saturation-Voltage of the product is 0.6 V.
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 80 V.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 2 A.
A: At what frequency does the Gain-Bandwidth-Product-fT?
Q: The product Gain-Bandwidth-Product-fT is 3 MHz.
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 2 A.
A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?
Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 40