| Mfr. #: | BUL1203E |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFET |
| 生命周期: | 制造商新产品。 |
| 数据表: | BUL1203E 数据表 |
Product belongs to the BUL1203E series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 5A . Maximum collector-emitter breakdown voltage of 550V DC current gain minimum (hFE) of Ic/Vce at 9 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1A, 3A Power-off control: 100000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 550 V The transistor polarity is NPN. The 1.2 kV voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 5 A Minimum hfe for DC collector-base gain is 10.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL1203E Specifications
A: What is the Series of the product?
Q: The Series of the product is BUL1203E.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.081130 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is TO-220-3.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 5A.
A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?
Q: The product Voltage-Collector-Emitter-Breakdown-Max is 550V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 9 @ 2A, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 1A, 3A.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 100000 mW.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 550 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 1.2 kV
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 9 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 5 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 10.