| Mfr. #: | BUL416T |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT NPN HI-VOLT FAST SW |
| 生命周期: | 制造商新产品。 |
| 数据表: | BUL416T 数据表 |
Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 800V DC current gain minimum (hFE) of Ic/Vce at 18 @ 700mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1.33A, 4A Power-off control: 110 W Maximum operating temperature of + 150 C Rated VCEO up to 800 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 9 A This product is capable of handling a 6 A continuous collector current. Minimum hfe for DC collector-base gain is 18. 32 of 605.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL416T Specifications
A: At what frequency does the Series?
Q: The product Series is 1000V Transistors.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.081130 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-220AB.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 6A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 800V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 18 @ 700mA, 5V
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 1.33A, 4A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 800 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 9 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 9 A.
A: Is the cutoff frequency of the product Continuous-Collector-Current?
Q: Yes, the product's Continuous-Collector-Current is indeed 6 A
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 18.
A: At what frequency does the DC-Current-Gain-hFE-Max?
Q: The product DC-Current-Gain-hFE-Max is 32.