BUTW92

Mfr. #: BUTW92
制造商: STMicroelectronics
描述: Bipolar Transistors - BJT NPN Hi-Curr High Spd
生命周期: 制造商新产品。
数据表: BUTW92 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BUTW92 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.229281 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 45A . Maximum collector-emitter breakdown voltage of 250V DC current gain minimum (hFE) of Ic/Vce at 9 @ 60A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 15A, 60A Power-off control: 180 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 250 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.8 V The 500 V voltage rating is 40 V. 7 V rating of 5 V This product is capable of handling a 60 A continuous collector current. Minimum hfe for DC collector-base gain is 9. 65 of 605.

BUTW92 Image

BUTW92

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUTW92 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.229281 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-247-3
  • Configuration Single
  • Power-Max 180W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 45A
  • Voltage-Collector-Emitter-Breakdown-Max 250V
  • DC-Current-Gain-hFE-Min-Ic-Vce 9 @ 60A, 3V
  • Vce-Saturation-Max-Ib-Ic 1V @ 15A, 60A
  • Current-Collector-Cutoff-Max 50μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 180 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 250 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.8 V
  • Collector-Base-Voltage-VCBO 500 V
  • Emitter-Base-Voltage-VEBO 7 V
  • Continuous-Collector-Current 60 A
  • DC-Collector-Base-Gain-hfe-Min 9
  • DC-Current-Gain-hFE-Max 65

BUTW92

BUTW92 Specifications

BUTW92 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.229281 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-247-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-247-3.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 45A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 250V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 9 @ 60A, 3V

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 1V @ 15A, 60A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 180 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 250 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 0.8 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 500 V

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 7 V.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 60 A

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 9

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 65.

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