CSD13306WT

Mfr. #: CSD13306WT
制造商: Texas Instruments
描述: MOSFET N-CH 12V 6DSBGA
生命周期: 制造商新产品。
数据表: CSD13306WT 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13306WT Overview

Product belongs to the CSD13306W series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 1.9 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 3.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 700 mV Vgs-th gate-source threshold voltage for efficient power management. The 15.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 7 ns. Qg-Gate-Charge is 8.6 nC. This product features a 15 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD13306WT Image

CSD13306WT

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13306WT Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD13306W
  • Packaging Reel
  • Unit-Weight 0.000060 oz
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case DSBGA-6
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 1.9 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8 ns
  • Rise-Time 11 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 3.5 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 700 mV
  • Rds-On-Drain-Source-Resistance 15.5 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 20 ns
  • Typical-Turn-On-Delay-Time 7 ns
  • Qg-Gate-Charge 8.6 nC
  • Forward-Transconductance-Min 15 S
  • Channel-Mode Enhancement

CSD13306WT

CSD13306WT Specifications

CSD13306WT FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD13306W.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.000060 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is DSBGA-6.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 1.9 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 8 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 11 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 10 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 3.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 700 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 15.5 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 8.6 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 15 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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