CSD13383F4T

Mfr. #: CSD13383F4T
制造商: Texas Instruments
描述: IGBT Transistors MOSFET 12V N-Channel FemtoFET MOSFET
生命周期: 制造商新产品。
数据表: CSD13383F4T 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD13383F4T Overview

Product belongs to the CSD13383F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. SMD-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 315 ns of 16 ns. This product has a 123 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 2.9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 1 V Vgs-th gate-source threshold voltage for efficient power management. The 44 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 96 ns This product has a 39 ns. Qg-Gate-Charge is 2 nC. This product features a 5.4 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD13383F4T Image

CSD13383F4T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD13383F4T Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD13383F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename FemtoFET
  • Package-Case SMD-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 315 ns
  • Rise-Time 123 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 2.9 A
  • Vds-Drain-Source-Breakdown-Voltage 12 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1 V
  • Rds-On-Drain-Source-Resistance 44 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 96 ns
  • Typical-Turn-On-Delay-Time 39 ns
  • Qg-Gate-Charge 2 nC
  • Forward-Transconductance-Min 5.4 S
  • Channel-Mode Enhancement

CSD13383F4T

CSD13383F4T Specifications

CSD13383F4T FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD13383F4.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is FemtoFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is SMD-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 315 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 123 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 2.9 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 12 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 44 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 96 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 39 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 2 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 5.4 S.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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