CSD16342Q5A

Mfr. #: CSD16342Q5A
制造商: Texas Instruments
描述: Trans MOSFET N-CH 25V 21A 8-Pin VSONP EP T/R
生命周期: 制造商新产品。
数据表: CSD16342Q5A 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16342Q5A Overview

Product belongs to the CSD16342Q5A series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-FET-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 10 V. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. The 5.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 6.5 nC.

CSD16342Q5A Image

CSD16342Q5A

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16342Q5A Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD16342Q5A
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-FET-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 21 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Rds-On-Drain-Source-Resistance 5.5 mOhms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 6.5 nC

CSD16342Q5A

CSD16342Q5A Specifications

CSD16342Q5A FAQ
  • A: At what frequency does the Series?

    Q: The product Series is CSD16342Q5A.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is VSON-FET-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 10 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 21 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 25 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 5.5 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 6.5 nC.

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