CSD16406

Mfr. #: CSD16406
制造商: Texas Instruments
描述:
生命周期: 制造商新产品。
数据表: CSD16406 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16406 Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (5x6) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 25V This product has an 1100pF @ 12.5V value of 300pF @ 25V. This product's Standard. 19A (Ta), 60A (Tc) continuous drain-ID current at 25°C; This product has an 5.3 mOhm @ 20A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.7 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 4.8 ns of 16 ns. This product has a 12.9 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 19 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.7 V Vgs-th gate-source threshold voltage for efficient power management. The 5.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 8.5 ns This product has a 7.3 ns. Qg-Gate-Charge is 5.8 nC. This product features a 53 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD16406 Image

CSD16406

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16406 Specifications
  • Manufacturer TI
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (5x6)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.7W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 25V
  • Input-Capacitance-Ciss-Vds 1100pF @ 12.5V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 19A (Ta), 60A (Tc)
  • Rds-On-Max-Id-Vgs 5.3 mOhm @ 20A, 10V
  • Vgs-th-Max-Id 2.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.1nC @ 4.5V
  • Pd-Power-Dissipation 2.7 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 4.8 ns
  • Rise-Time 12.9 ns
  • Vgs-Gate-Source-Voltage 16 V
  • Id-Continuous-Drain-Current 19 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.7 V
  • Rds-On-Drain-Source-Resistance 5.9 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 8.5 ns
  • Typical-Turn-On-Delay-Time 7.3 ns
  • Qg-Gate-Charge 5.8 nC
  • Forward-Transconductance-Min 53 S
  • Channel-Mode Enhancement

CSD16406

CSD16406 Specifications

CSD16406 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-PowerTDFN

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-VSON (5x6).

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 25V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 1100pF @ 12.5V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 19A (Ta), 60A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 5.3 mOhm @ 20A, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 2.7 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 4.8 ns

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 12.9 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 16 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 19 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.7 V

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 5.9 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 8.5 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 7.3 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 5.8 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 53 S

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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