| Mfr. #: | CSD19501KCS |
|---|---|
| 制造商: | Texas Instruments |
| 描述: | Darlington Transistors MOSFET 80V N-CH NexFET Pwr MOSFET |
| 生命周期: | 制造商新产品。 |
| 数据表: | CSD19501KCS 数据表 |
Product belongs to the CSD19501KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 217 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 121 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.6 V Vgs-th gate-source threshold voltage for efficient power management. The 6.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 38 nC. This product features a 137 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD19501KCS Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed CSD19501KCS
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.211644 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Number-of-Channels of the product?
Q: The Number-of-Channels of the product is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 217 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 5 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 15 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?
Q: Yes, the product's Id-Continuous-Drain-Current is indeed 121 A
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 80 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.6 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 6.2 mOhms
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 38 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 137 S.