CSD19503KCS

Mfr. #: CSD19503KCS
制造商: Texas Instruments
描述: MOSFET N-CH 80V 94A TO220-3
生命周期: 制造商新产品。
数据表: CSD19503KCS 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19503KCS Overview

Product belongs to the CSD19503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 188 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 94 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 8.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 7 ns. Qg-Gate-Charge is 28 nC. This product features a 110 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19503KCS Image

CSD19503KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19503KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD19503KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 188 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 2 ns
  • Rise-Time 3 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 94 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
  • Rds-On-Drain-Source-Resistance 8.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns
  • Typical-Turn-On-Delay-Time 7 ns
  • Qg-Gate-Charge 28 nC
  • Forward-Transconductance-Min 110 S
  • Channel-Mode Enhancement

CSD19503KCS

CSD19503KCS Specifications

CSD19503KCS FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD19503KCS

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 188 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 2 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 3 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 94 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 80 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.8 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.8 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 11 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 28 nC.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 110 S

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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数量
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小计金额
1
US$0.88
US$0.88
10
US$0.84
US$8.41
100
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US$79.65
500
US$0.75
US$376.15
1000
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