| Mfr. #: | CSD19506KCS |
|---|---|
| 制造商: | Texas Instruments |
| 描述: | Darlington Transistors MOSFET 80V N-CH Power MOSFET |
| 生命周期: | 制造商新产品。 |
| 数据表: | CSD19506KCS 数据表 |
Product belongs to the CSD19506KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 375 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 273 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 19 ns. Qg-Gate-Charge is 120 nC. This product features a 297 S of 500 S for high performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD19506KCS Specifications
A: What is the Series of the product?
Q: The Series of the product is CSD19506KCS.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.211644 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed 1 N-Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 375 W.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 10 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 273 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 80 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.5 V
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 2.2 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 30 ns
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 19 ns
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 120 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 297 S.