CSD19536KCS

CSD19536KCS Overview

Product belongs to the NexFET series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220-3 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 100V This product has an 12000pF @ 50V value of 300pF @ 25V. This product's Standard. 150A (Ta) continuous drain-ID current at 25°C; This product has an 2.7 mOhm @ 100A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 375 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 5 ns of 16 ns. This product has a 8 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 259 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.5 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 118 nC. This product features a 307 S of 500 S for high performance.

CSD19536KCS Image

CSD19536KCS Specifications

• Manufacturer TI
• Product Category FETs - Single
• Series NexFET
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220-3
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 375W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 100V
• Input-Capacitance-Ciss-Vds 12000pF @ 50V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 150A (Ta)
• Rds-On-Max-Id-Vgs 2.7 mOhm @ 100A, 10V
• Vgs-th-Max-Id 3.2V @ 250μA
• Gate-Charge-Qg-Vgs 153nC @ 10V
• Pd-Power-Dissipation 375 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 5 ns
• Rise-Time 8 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 259 A
• Vds-Drain-Source-Breakdown-Voltage 100 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.5 V
• Rds-On-Drain-Source-Resistance 2.5 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 118 nC
• Forward-Transconductance-Min 307 S

CSD19536KCS FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.211644 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is NexFET.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 175°C (TJ)

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220-3.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: What is the Drain-to-Source-Voltage-Vdss of the product?

  Q: The Drain-to-Source-Voltage-Vdss of the product is 100V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 12000pF @ 50V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 150A (Ta).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 2.7 mOhm @ 100A, 10V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 375 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 5 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 8 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 259 A.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 100 V

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 2.5 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 2.5 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 118 nC.

• A: At what frequency does the Forward-Transconductance-Min?

  Q: The product Forward-Transconductance-Min is 307 S.