CSD22202W15

Mfr. #: CSD22202W15
制造商: Texas Instruments
描述: MOSFET P-CH 8V 10A 9DSBGA
生命周期: 制造商新产品。
数据表: CSD22202W15 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD22202W15 Overview

Product belongs to the CSD22202W15 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-9 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 1.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 38 ns of 16 ns. This product has a 8.4 ns of 16 ns. This product's - 6 V. The ID of continuous drain current is - 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 8 V. This product has a - 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 12.2 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 109 ns This product has a 10.4 ns. Qg-Gate-Charge is 6.5 nC. This product operates in Enhancement channel mode for optimal performance.

CSD22202W15 Image

CSD22202W15

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD22202W15 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD22202W15
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case DSBGA-9
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 1.5 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 38 ns
  • Rise-Time 8.4 ns
  • Vgs-Gate-Source-Voltage - 6 V
  • Id-Continuous-Drain-Current - 5 A
  • Vds-Drain-Source-Breakdown-Voltage - 8 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 800 mV
  • Rds-On-Drain-Source-Resistance 12.2 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 109 ns
  • Typical-Turn-On-Delay-Time 10.4 ns
  • Qg-Gate-Charge 6.5 nC
  • Channel-Mode Enhancement

CSD22202W15

CSD22202W15 Specifications

CSD22202W15 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD22202W15

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is DSBGA-9.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single Channel.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 1.5 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 38 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 8.4 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 6 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 8 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 800 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 12.2 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 109 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 10.4 ns

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 6.5 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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