CSD25481F4

Mfr. #: CSD25481F4
制造商: Texas Instruments
描述: MOSFET P-CH 20V 2.5A 3PICOSTAR
生命周期: 制造商新产品。
数据表: CSD25481F4 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25481F4 Overview

Product belongs to the CSD25481F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. PicoStar-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.7 ns of 16 ns. This product has a 3.6 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 105 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16.9 ns This product has a 4.1 ns. Qg-Gate-Charge is 0.913 nC. This product features a 3.3 S of 500 S for high performance.

CSD25481F4 Image

CSD25481F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25481F4 Specifications
  • Manufacturer TI
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25481F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case PicoStar-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.7 ns
  • Rise-Time 3.6 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 950 mV
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 16.9 ns
  • Typical-Turn-On-Delay-Time 4.1 ns
  • Qg-Gate-Charge 0.913 nC
  • Forward-Transconductance-Min 3.3 S

CSD25481F4

CSD25481F4 Specifications

CSD25481F4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD25481F4

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed PicoStar-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Channel

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 6.7 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 3.6 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 12 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is - 950 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 105 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is P-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 16.9 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 4.1 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 0.913 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 3.3 S.

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