CSD25484F4T

Mfr. #: CSD25484F4T
制造商: Texas Instruments
描述: MOSFET P-CH 20V 2.5A 3PICOSTAR
生命周期: 制造商新产品。
数据表: CSD25484F4T 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25484F4T Overview

Product belongs to the CSD25484F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. LGA-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 8.5 ns of 16 ns. This product has a 5 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 1.2 V Vgs-th gate-source threshold voltage for efficient power management. The 825 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 18 ns This product has a 9.5 ns. Qg-Gate-Charge is 1090 pC. This product features a 3.5 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD25484F4T Image

CSD25484F4T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25484F4T Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25484F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename FemtoFET
  • Package-Case LGA-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 8.5 ns
  • Rise-Time 5 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 1.2 V
  • Rds-On-Drain-Source-Resistance 825 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 18 ns
  • Typical-Turn-On-Delay-Time 9.5 ns
  • Qg-Gate-Charge 1090 pC
  • Forward-Transconductance-Min 3.5 S
  • Channel-Mode Enhancement

CSD25484F4T

CSD25484F4T Specifications

CSD25484F4T FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD25484F4.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: At what frequency does the Tradename?

    Q: The product Tradename is FemtoFET.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed LGA-3

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 P-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 500 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 8.5 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 5 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 12 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 20 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 1.2 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 825 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 18 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 9.5 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 1090 pC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 3.5 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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