CSD87334Q3D

Mfr. #: CSD87334Q3D
制造商: Texas Instruments
描述: MOSFET 2N-CH 30V 20A 8SON
生命周期: 制造商新产品。
数据表: CSD87334Q3D 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD87334Q3D Overview

Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.002677 oz SMD/SMT Mounting-Style 8-PowerTDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-VSON (3.3x3.3) Configuration Dual This product uses an 2 N-Channel (Dual) Asymmetrical FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1260pF @ 15V value of 300pF @ 25V. This product's Logic Level Gate. 20A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 12A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 17 ns 17 ns of 16 ns. This product has a 7 ns 7 ns of 16 ns. This product's 8 V 8 V. The ID of continuous drain current is 20 A 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V 30 V. This product has a 750 mV 750 mV Vgs-th gate-source threshold voltage for efficient power management. The 8.3 mOhms 8.3 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns 11 ns This product has a 4 ns 4 ns. Qg-Gate-Charge is 750 mV 6.4 nC 6.4 nC. This product operates in Enhancement channel mode for optimal performance.

CSD87334Q3D Image

CSD87334Q3D

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD87334Q3D Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Arrays
  • Series NexFET
  • Packaging Tape & Reel (TR) Alternate Packaging
  • Unit-Weight 0.002677 oz
  • Mounting-Style SMD/SMT
  • Package-Case 8-PowerTDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-VSON (3.3x3.3)
  • Configuration Dual
  • FET-Type 2 N-Channel (Dual) Asymmetrical
  • Power-Max 6W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 1260pF @ 15V
  • FET-Feature Logic Level Gate
  • Current-Continuous-Drain-Id-25°C 20A
  • Rds-On-Max-Id-Vgs 6 mOhm @ 12A, 8V
  • Vgs-th-Max-Id 1.2V @ 250μA
  • Gate-Charge-Qg-Vgs 8.3nC @ 4.5V
  • Pd-Power-Dissipation 6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 17 ns 17 ns
  • Rise-Time 7 ns 7 ns
  • Vgs-Gate-Source-Voltage 8 V 8 V
  • Id-Continuous-Drain-Current 20 A 20 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 750 mV 750 mV
  • Rds-On-Drain-Source-Resistance 8.3 mOhms 8.3 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 11 ns 11 ns
  • Typical-Turn-On-Delay-Time 4 ns 4 ns
  • Qg-Gate-Charge 750 mV 6.4 nC 6.4 nC
  • Channel-Mode Enhancement

CSD87334Q3D

CSD87334Q3D Specifications

CSD87334Q3D FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tape & Reel (TR) Alternate Packaging

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.002677 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-PowerTDFN.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-VSON (3.3x3.3)

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: What is the FET-Type of the product?

    Q: The FET-Type of the product is 2 N-Channel (Dual) Asymmetrical.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1260pF @ 15V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Logic Level Gate.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 20A.

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 6 mOhm @ 12A, 8V

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 6 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 17 ns 17 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 7 ns 7 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 8 V 8 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 20 A 20 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V 30 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 750 mV 750 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 8.3 mOhms 8.3 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 11 ns 11 ns.

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 4 ns 4 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 750 mV 6.4 nC 6.4 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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