DN3535N8-G

DN3535N8-G Overview

Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.001862 oz SMD/SMT Mounting-Style TO-243AA Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: TO-243AA (SOT-89) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 350V This product has an 360pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 230mA (Tj) continuous drain-ID current at 25°C; This product has an 10 Ohm @ 150mA, 0V of 12 Ohm @ 150mA, 0V. Power-off control: 1.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 20 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 230 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 350 V. The 10 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 15 ns. This product operates in Depletion channel mode for optimal performance.

DN3535N8-G Image

DN3535N8-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Digi-ReelR Alternate Packaging
• Unit-Weight 0.001862 oz
• Mounting-Style SMD/SMT
• Package-Case TO-243AA
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-243AA (SOT-89)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 1.6W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 350V
• Input-Capacitance-Ciss-Vds 360pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 230mA (Tj)
• Rds-On-Max-Id-Vgs 10 Ohm @ 150mA, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 1.6 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 20 ns
• Rise-Time 20 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 230 mA
• Vds-Drain-Source-Breakdown-Voltage 350 V
• Rds-On-Drain-Source-Resistance 10 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20 ns
• Typical-Turn-On-Delay-Time 15 ns
• Channel-Mode Depletion

DN3535N8-G FAQ

• A: What is the Series of the product?

  Q: The Series of the product is -.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.001862 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-243AA.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

• A: At what frequency does the Mounting-Type?

  Q: The product Mounting-Type is Surface Mount.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-243AA (SOT-89).

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

  Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 350V

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 360pF @ 25V.

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Depletion Mode.

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 230mA (Tj).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 10 Ohm @ 150mA, 0V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 1.6 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: At what frequency does the Minimum-Operating-Temperature?

  Q: The product Minimum-Operating-Temperature is - 55 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 20 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 20 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 230 mA.

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 350 V

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 10 Ohms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 20 ns.

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 15 ns

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Depletion