LET20030C

LET20030C Overview

Product belongs to the LET20030 series. Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style M243 Si is the technology used. The device offers a 13.9 dB of 26dB. Power-off control: 108 W Maximum operating temperature of + 200 C The operating frequency is 2 GHz. This product's 80 V. The ID of continuous drain current is 160 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. The transistor polarity is N-Channel.

LET20030C Image

LET20030C Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series LET20030
• Type RF Power MOSFET
• Packaging Bulk
• Mounting-Style SMD/SMT
• Package-Case M243
• Technology Si
• Gain 13.9 dB
• Output-Power 45 W
• Pd-Power-Dissipation 108 W
• Maximum-Operating-Temperature + 200 C
• Operating-Frequency 2 GHz
• Vgs-Gate-Source-Voltage 80 V
• Id-Continuous-Drain-Current 160 A
• Vds-Drain-Source-Breakdown-Voltage 75 V
• Transistor-Polarity N-Channel

LET20030C FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed LET20030

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Bulk

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed M243

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Gain of the product?

  Q: The Gain of the product is 13.9 dB.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 108 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 200 C.

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 2 GHz

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 80 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 160 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel