| Mfr. #: | MJD112T4 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Darlington Transistors NPN Power Darlington |
| 生命周期: | 制造商新产品。 |
| 数据表: | MJD112T4 数据表 |


Product belongs to the MJD112T4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 2A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 40mA, 4A Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 200. 20 uA Maximum Collector Cut-off Current;

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD112T4 Specifications
A: At what frequency does the Series?
Q: The product Series is MJD112T4.
A: What is the Packaging of the product?
Q: The Packaging of the product is Digi-ReelR Alternate Packaging.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.063493 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is D-Pak.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN - Darlington.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 2A
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 1000 @ 2A, 3V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 3V @ 40mA, 4A.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 100 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 100 V
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 2 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 200.
A: What is the Maximum-Collector-Cut-off-Current of the product?
Q: The Maximum-Collector-Cut-off-Current of the product is 20 uA.