MJD112T4

Mfr. #: MJD112T4
制造商: STMicroelectronics
描述: Darlington Transistors NPN Power Darlington
生命周期: 制造商新产品。
数据表: MJD112T4 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MJD112T4 Overview

Product belongs to the MJD112T4 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.063493 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount mounting type Supplier device package: D-Pak Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 2A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 1000 @ 2A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 3V @ 40mA, 4A Maximum operating temperature of + 150 C Rated VCEO up to 100 V The transistor polarity is NPN. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 2 A Minimum hfe for DC collector-base gain is 200. 20 uA Maximum Collector Cut-off Current;

MJD112T4 Image

MJD112T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MJD112T4 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series MJD112T4
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.063493 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting-Type Surface Mount
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • Power-Max 20W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 2A
  • Voltage-Collector-Emitter-Breakdown-Max 100V
  • DC-Current-Gain-hFE-Min-Ic-Vce 1000 @ 2A, 3V
  • Vce-Saturation-Max-Ib-Ic 3V @ 40mA, 4A
  • Current-Collector-Cutoff-Max 20μA
  • Frequency-Transition 25MHz
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 100 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 100 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 2 A
  • DC-Collector-Base-Gain-hfe-Min 200
  • Maximum-Collector-Cut-off-Current 20 uA

MJD112T4

MJD112T4 Specifications

MJD112T4 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MJD112T4.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.063493 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D-Pak.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN - Darlington.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 2A

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 1000 @ 2A, 3V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 3V @ 40mA, 4A.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 100 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 100 V

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 2 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 200.

  • A: What is the Maximum-Collector-Cut-off-Current of the product?

    Q: The Maximum-Collector-Cut-off-Current of the product is 20 uA.

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