SCT30N120

Mfr. #: SCT30N120
制造商: STMicroelectronics
描述: MOSFET N-CH 1200V 45A HIP247
生命周期: 制造商新产品。
数据表: SCT30N120 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
SCT30N120 Overview

Product belongs to the SiC MOSFETs series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 SiC is the technology used. Operational temperature range: -55°C ~ 200°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: HiP247 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 1200V (1.2kV) This product has an 1700pF @ 400V value of 300pF @ 25V. This product's Silicon Carbide (SiC). 40A (Tc) continuous drain-ID current at 25°C; This product has an 100 mOhm @ 20A, 20V of 12 Ohm @ 150mA, 0V. Power-off control: 270 W Maximum operating temperature of + 200 C Minimum operating temperature: - 55 C This product has a 28 ns of 16 ns. This product has a 20 ns of 16 ns. This product's - 10 V/+ 25 V. The ID of continuous drain current is 45 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 1200 V. This product has a 2.6 V Vgs-th gate-source threshold voltage for efficient power management. The 80 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 19 ns. Qg-Gate-Charge is 105 nC.

SCT30N120 Image

SCT30N120

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCT30N120 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SiC MOSFETs
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology SiC
  • Operating-Temperature -55°C ~ 200°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package HiP247
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 270W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 1200V (1.2kV)
  • Input-Capacitance-Ciss-Vds 1700pF @ 400V
  • FET-Feature Silicon Carbide (SiC)
  • Current-Continuous-Drain-Id-25°C 40A (Tc)
  • Rds-On-Max-Id-Vgs 100 mOhm @ 20A, 20V
  • Vgs-th-Max-Id 2.6V @ 1mA (Typ)
  • Gate-Charge-Qg-Vgs 105nC @ 20V
  • Pd-Power-Dissipation 270 W
  • Maximum-Operating-Temperature + 200 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 28 ns
  • Rise-Time 20 ns
  • Vgs-Gate-Source-Voltage - 10 V/+ 25 V
  • Id-Continuous-Drain-Current 45 A
  • Vds-Drain-Source-Breakdown-Voltage 1200 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.6 V
  • Rds-On-Drain-Source-Resistance 80 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 45 ns
  • Typical-Turn-On-Delay-Time 19 ns
  • Qg-Gate-Charge 105 nC

SCT30N120

SCT30N120 Specifications

SCT30N120 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SiC MOSFETs.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 1.340411 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is SiC.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 200°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is HiP247.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 1200V (1.2kV)

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 1700pF @ 400V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Silicon Carbide (SiC).

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 40A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 100 mOhm @ 20A, 20V

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 270 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 200 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: Is the cutoff frequency of the product Fall-Time?

    Q: Yes, the product's Fall-Time is indeed 28 ns

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 20 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is - 10 V/+ 25 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 45 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 1200 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.6 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 80 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 19 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 105 nC.

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