SD56120

SD56120 Overview

Product belongs to the SD56120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M246 Si is the technology used. The device offers a 14 dB at 860 MHz of 26dB. Power-off control: 217 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD56120 Image

SD56120 Specifications

• Manufacturer ST
• Product Category Module
• Series SD56120
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case M246
• Technology Si
• Gain 14 dB at 860 MHz
• Output-Power 100 W
• Pd-Power-Dissipation 217 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 3 S

SD56120 FAQ

• A: At what frequency does the Series?

  Q: The product Series is SD56120.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed M246

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 14 dB at 860 MHz

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 217 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

• A: Is the cutoff frequency of the product Operating-Frequency?

  Q: Yes, the product's Operating-Frequency is indeed 1 GHz

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 14 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 3 S.