SD56120M

SD56120M Overview

Product belongs to the SD56120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M252 Si is the technology used. The device offers a 13 dB at 860 MHz of 26dB. Power-off control: 236 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD56120M Image

SD56120M Specifications

• Manufacturer ST
• Product Category Module
• Series SD56120
• Type RF Power MOSFET
• Packaging Tube
• Mounting-Style SMD/SMT
• Package-Case M252
• Technology Si
• Gain 13 dB at 860 MHz
• Output-Power 120 W
• Pd-Power-Dissipation 236 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 1 GHz
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 14 A
• Vds-Drain-Source-Breakdown-Voltage 65 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 3 S

SD56120M FAQ

• A: What is the Series of the product?

  Q: The Series of the product is SD56120.

• A: Is the cutoff frequency of the product Type?

  Q: Yes, the product's Type is indeed RF Power MOSFET

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is M252.

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 13 dB at 860 MHz

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 236 W.

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

• A: At what frequency does the Operating-Frequency?

  Q: The product Operating-Frequency is 1 GHz.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 14 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 65 V.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 3 S