| Mfr. #: | STAC250V2-500E |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | RF MOSFET Transistors POWER R.F. |
| 生命周期: | 制造商新产品。 |
| 数据表: | STAC250V2-500E 数据表 |
Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style STAC177B Si is the technology used. The device offers a 23 dB of 26dB. Maximum operating temperature of + 150 C The operating frequency is 27 MHz. This product's 20 V. The ID of continuous drain current is 1 uA. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STAC250V2-500E Specifications
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Bulk
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is STAC177B.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 23 dB
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 27 MHz.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 20 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1 uA.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 900 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.