STB100N6F7

Mfr. #: STB100N6F7
制造商: STMicroelectronics
描述: MOSFET N-CH 60V 100A F7 D2PAK
生命周期: 制造商新产品。
数据表: STB100N6F7 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB100N6F7 Overview

Tube is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 125 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 55.5 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 100 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 5.6 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 28.6 ns This product has a 21.6 ns. Qg-Gate-Charge is 30 nC. This product operates in Enhancement channel mode for optimal performance.

STB100N6F7 Image

STB100N6F7

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB100N6F7 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Packaging Tube
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Pd-Power-Dissipation 125 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 55.5 ns
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 100 A
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2 V
  • Rds-On-Drain-Source-Resistance 5.6 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 28.6 ns
  • Typical-Turn-On-Delay-Time 21.6 ns
  • Qg-Gate-Charge 30 nC
  • Channel-Mode Enhancement

STB100N6F7

STB100N6F7 Specifications

STB100N6F7 FAQ
  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Tube

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 125 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 15 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 55.5 ns

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 100 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 5.6 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 28.6 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 21.6 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 30 nC

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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