STB10N95K5

Mfr. #: STB10N95K5
制造商: STMicroelectronics
描述: MOSFET N-CH 950V 8A D2PAK
生命周期: 制造商新产品。
数据表: STB10N95K5 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB10N95K5 Overview

Product belongs to the SuperMESH5 series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D2PAK Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 950V This product has an 630pF @ 100V value of 300pF @ 25V. This product's Standard. 8A (Tc) continuous drain-ID current at 25°C; This product has an 800 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 130 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 14 ns of 16 ns. This product's +/- 30 V. The ID of continuous drain current is 8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 950 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 800 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 51 ns This product has a 22 ns. Qg-Gate-Charge is 22 nC. This product operates in Enhancement channel mode for optimal performance.

STB10N95K5 Image

STB10N95K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB10N95K5 Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series SuperMESH5
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D2PAK
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 130W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 950V
  • Input-Capacitance-Ciss-Vds 630pF @ 100V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 8A (Tc)
  • Rds-On-Max-Id-Vgs 800 mOhm @ 4A, 10V
  • Vgs-th-Max-Id 5V @ 100μA
  • Gate-Charge-Qg-Vgs 22nC @ 10V
  • Pd-Power-Dissipation 130 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 15 ns
  • Rise-Time 14 ns
  • Vgs-Gate-Source-Voltage +/- 30 V
  • Id-Continuous-Drain-Current 8 A
  • Vds-Drain-Source-Breakdown-Voltage 950 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4 V
  • Rds-On-Drain-Source-Resistance 800 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 51 ns
  • Typical-Turn-On-Delay-Time 22 ns
  • Qg-Gate-Charge 22 nC
  • Channel-Mode Enhancement

STB10N95K5

STB10N95K5 Specifications

STB10N95K5 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is SuperMESH5.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-263-3, D2Pak (2 Leads + Tab), TO-263AB.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: At what frequency does the Operating-Temperature?

    Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is D2PAK.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 950V.

  • A: At what frequency does the Input-Capacitance-Ciss-Vds?

    Q: The product Input-Capacitance-Ciss-Vds is 630pF @ 100V.

  • A: Is the cutoff frequency of the product FET-Feature?

    Q: Yes, the product's FET-Feature is indeed Standard

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 8A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 800 mOhm @ 4A, 10V.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 130 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 15 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 14 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 8 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 950 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 800 mOhms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 51 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 22 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 22 nC.

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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