STB20NM50FDT4

STB20NM50FDT4 Overview

Product belongs to the STB20NM50FD series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 192 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C This product has a 15 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 20 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. The 250 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. This product has a 22 ns. Qg-Gate-Charge is 38 nC. This product operates in Enhancement channel mode for optimal performance.

STB20NM50FDT4 Image

STB20NM50FDT4 Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series STB20NM50FD
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 192 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Fall-Time 15 ns
• Rise-Time 20 ns
• Vgs-Gate-Source-Voltage 30 V
• Id-Continuous-Drain-Current 20 A
• Vds-Drain-Source-Breakdown-Voltage 500 V
• Rds-On-Drain-Source-Resistance 250 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-On-Delay-Time 22 ns
• Qg-Gate-Charge 38 nC
• Channel-Mode Enhancement

STB20NM50FDT4 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is STB20NM50FD.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Reel

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.139332 oz.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-252-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 192 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 15 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 20 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 20 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 500 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 250 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 22 ns.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 38 nC

• A: At what frequency does the Channel-Mode?

  Q: The product Channel-Mode is Enhancement.