STD4N52K3

Mfr. #: STD4N52K3
制造商: STMicroelectronics
描述: MOSFET N-CH 525V 4.4A DPAK
生命周期: 制造商新产品。
数据表: STD4N52K3 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD4N52K3 Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 70 W Maximum operating temperature of + 150 C This product's 3 V. The ID of continuous drain current is 3.8 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 525 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 1.95 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 14 nC.

STD4N52K3 Image

STD4N52K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD4N52K3 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Vgs-Gate-Source-Voltage 3 V
  • Id-Continuous-Drain-Current 3.8 A
  • Vds-Drain-Source-Breakdown-Voltage 525 V
  • Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
  • Rds-On-Drain-Source-Resistance 1.95 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 14 nC

STD4N52K3

STD4N52K3 Specifications

STD4N52K3 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is N-channel MDmesh.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 70 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 3 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 3.8 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 525 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4.5 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 1.95 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 14 nC.

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