| Mfr. #: | STD845DN40 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat) |
| 生命周期: | 制造商新产品。 |
| 数据表: | STD845DN40 数据表 |


Product belongs to the STD845DN40 series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 1A, 4A Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 500 mV The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 10.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD845DN40 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STD845DN40
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.080001 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 8-DIP (0.300", 7.62mm).
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 8-DIP
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 NPN (Dual).
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 4A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 400V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 12 @ 2A, 5V.
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 1A, 4A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 45 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 400 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?
Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 500 mV
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 700 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 9 V to 18 V
A: At what frequency does the Maximum-DC-Collector-Current?
Q: The product Maximum-DC-Collector-Current is 8 A.
A: Is the cutoff frequency of the product Continuous-Collector-Current?
Q: Yes, the product's Continuous-Collector-Current is indeed 4 A
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 10.