STD845DN40

Mfr. #: STD845DN40
制造商: STMicroelectronics
描述: Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat)
生命周期: 制造商新产品。
数据表: STD845DN40 数据表
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD845DN40 Overview

Product belongs to the STD845DN40 series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 1A, 4A Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 500 mV The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 10.

STD845DN40 Image

STD845DN40

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD845DN40 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Arrays
  • Series STD845DN40
  • Packaging Tube
  • Unit-Weight 0.080001 oz
  • Mounting-Style Through Hole
  • Package-Case 8-DIP (0.300", 7.62mm)
  • Mounting-Type Through Hole
  • Supplier-Device-Package 8-DIP
  • Configuration Dual
  • Power-Max 3W
  • Transistor-Type 2 NPN (Dual)
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 12 @ 2A, 5V
  • Vce-Saturation-Max-Ib-Ic 500mV @ 1A, 4A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 500 mV
  • Collector-Base-Voltage-VCBO 700 V
  • Emitter-Base-Voltage-VEBO 9 V to 18 V
  • Maximum-DC-Collector-Current 8 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 10

STD845DN40

STD845DN40 Specifications

STD845DN40 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STD845DN40

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.080001 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-DIP (0.300", 7.62mm).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed 8-DIP

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Dual

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 2 NPN (Dual).

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 4A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 400V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 12 @ 2A, 5V.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 1A, 4A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 45 W

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 400 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 500 mV

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 700 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 9 V to 18 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 8 A.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 4 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 10.

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