| Mfr. #: | STF12N120K5 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 1200V 12A TO-220FP |
| 生命周期: | 制造商新产品。 |
| 数据表: | STF12N120K5 数据表 |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 80 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 20 V. The 2.5 V to 4.5 V Gate-Source Threshold Voltage of Vgs th; 150 nC Gate Charge of Qg; Maximum Operating Temperature: + 175 C Si is the technology used. Enhancement Channel Mode Fall Time of 48 ns - 55 C minimum operating temperature The power dissipation is 167 W. 61 ns Rise Time 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 162 ns; The 24 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF12N120K5 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed SMD/SMT
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-252-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: Is the cutoff frequency of the product Transistor Polarity?
Q: Yes, the product's Transistor Polarity is indeed N-Channel
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 80 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 80 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 6.5 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is +/- 20 V.
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2.5 V to 4.5 V
A: At what frequency does the Qg - Gate Charge?
Q: The product Qg - Gate Charge is 150 nC.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 175 C.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Channel Mode?
Q: Yes, the product's Channel Mode is indeed Enhancement
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 48 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 167 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 61 ns
A: What is the Transistor Type of the product?
Q: The Transistor Type of the product is 1 N-Channel.
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 162 ns.
A: At what frequency does the Typical Turn-On Delay Time?
Q: The product Typical Turn-On Delay Time is 24 ns.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 0.139332 oz.