| Mfr. #: | STF24N65M2 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | IGBT Transistors MOSFET POWER MOSFET |
| 生命周期: | 制造商新产品。 |
| 数据表: | STF24N65M2 数据表 |
Product belongs to the MDmesh M2 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220FP-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 25.5 ns of 16 ns. This product has a 9.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 650 V. This product has a 2 V Vgs-th gate-source threshold voltage for efficient power management. The 185 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 68 ns This product has a 10 ns. Qg-Gate-Charge is 29 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF24N65M2 Specifications
A: What is the Series of the product?
Q: The Series of the product is MDmesh M2.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.081130 oz
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220FP-3.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 25.5 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 9.5 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 25 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 16 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 650 V.
A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?
Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2 V
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 185 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 68 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 10 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 29 nC.
A: At what frequency does the Channel-Mode?
Q: The product Channel-Mode is Enhancement.