| Mfr. #: | STF35N60DM2 |
|---|---|
| 制造商: | STMicroelectronics |
| 描述: | MOSFET N-CH 600V 28A |
| 生命周期: | 制造商新产品。 |
| 数据表: | STF35N60DM2 数据表 |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-220FP-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 28 A; The Rds On - Drain-Source Resistance of the product is 110 mOhms. The Vgs - Gate-Source Voltage attribute for this product is +/- 25 V. The 3 V Gate-Source Threshold Voltage of Vgs th; 54 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration 1 N-Channel Fall Time of 10.7 ns - 55 C minimum operating temperature The power dissipation is 40 W. 17 ns Rise Time Typical Turn-Off Delay Time of 68 ns; The 21.2 ns typical turn-on delay time The Unit Weight is 0.081130 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STF35N60DM2 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-220FP-3.
A: What is the Number of Channels of the product?
Q: The Number of Channels of the product is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 600 V
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 28 A
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 110 mOhms
A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?
Q: Yes, the product's Vgs - Gate-Source Voltage is indeed +/- 25 V
A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?
Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 3 V
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 54 nC
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 150 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: At what frequency does the Configuration?
Q: The product Configuration is 1 N-Channel.
A: At what frequency does the Fall Time?
Q: The product Fall Time is 10.7 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 40 W
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 17 ns
A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?
Q: Yes, the product's Typical Turn-Off Delay Time is indeed 68 ns
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 21.2 ns
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.081130 oz